IKQ40N120CH3 PDF Spec and Replacement, IGBT Equivalent Finder, Cross Reference

IKQ40N120CH3 PDF Specs and Replacement

   Type Designator: IKQ40N120CH3
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   tr ⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 235 pF
   Package: TO247

IKQ40N120CH3 Substitution

- IGBT ⓘ Cross-Reference Search

IKQ40N120CH3 PDF specs

..1. Size:1603K infineon
ikq40n120ch3.pdf pdf_icon

IKQ40N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery full current rated anti-parallel Emitter Controlled diode C Features High speed H3 technology offers High efficiency in hard switching and resonant topologies 10 sec short circuit withstand time at T =175 C vj Easy parallel... See More ⇒

4.1. Size:1635K infineon
ikq40n120ct2.pdf pdf_icon

IKQ40N120CT2 TRENCHSTOPTM 2 low V second generation IGBT ce(sat) Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fast ce(sat) recovery full current rated anti-parallel Emitter Controlled Diode C Features TRENCHSTOP 2 technology offers Very low V , 1.75V at nominal current CE(sat) 10 sec short circuit withstand time at T =175 C vj Easy paralleling cap... See More ⇒

Specs: IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , RJP63K2DPP-M0 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 .