All IGBT. IKQ40N120CH3 Datasheet

 

IKQ40N120CH3 Datasheet and Replacement


   Type Designator: IKQ40N120CH3
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 235 pF
   Package: TO247
 
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IKQ40N120CH3 Datasheet (PDF)

 ..1. Size:1603K  infineon
 ikq40n120ch3.pdf pdf_icon

IKQ40N120CH3

IKQ40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel

 4.1. Size:1635K  infineon
 ikq40n120ct2.pdf pdf_icon

IKQ40N120CH3

IKQ40N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap

Datasheet: IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , RJP63K2DPP-M0 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 .

History: 70MT060WSP | STGB6NC60HD

Keywords - IKQ40N120CH3 transistor datasheet

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