All IGBT. IKQ40N120CH3 Datasheet

 

IKQ40N120CH3 IGBT. Datasheet pdf. Equivalent


   Type Designator: IKQ40N120CH3
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K40MCH3
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 500
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 46
   Collector Capacity (Cc), typ, pF: 235
   Total Gate Charge (Qg), typ, nC: 190
   Package: TO247

 IKQ40N120CH3 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IKQ40N120CH3 Datasheet (PDF)

 ..1. Size:1603K  infineon
 ikq40n120ch3.pdf

IKQ40N120CH3 IKQ40N120CH3

IKQ40N120CH3High speed switching series third generation IGBTLow switching losses IGBT in Highspeed3 technology copacked with soft, fastrecovery full current rated anti-parallel Emitter Controlled diodeCFeatures:High speed H3 technology offers: High efficiency in hard switching and resonant topologies 10sec short circuit withstand time at T =175Cvj Easy parallel

 4.1. Size:1635K  infineon
 ikq40n120ct2.pdf

IKQ40N120CH3 IKQ40N120CH3

IKQ40N120CT2TRENCHSTOPTM 2 low V second generation IGBTce(sat)Low V IGBT in TRENCHSTOP 2 technology copacked with soft, fastce(sat)recovery full current rated anti-parallel Emitter Controlled DiodeCFeatures:TRENCHSTOP 2 technology offers: Very low V , 1.75V at nominal currentCE(sat) 10sec short circuit withstand time at T =175Cvj Easy paralleling cap

Datasheet: IKFW90N65ES5 , IKP20N60TA , IKP28N65ES5 , IKP39N65ES5 , IKP40N65H5 , IKW40N65H5 , IKQ100N60T , IKQ120N60T , FGH40N60UFD , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 .

 

 
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