IKW30N60DTP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW30N60DTP  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 200 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 53 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 21 nS

Coesⓘ - Capacitancia de salida, typ: 58 pF

Encapsulados: TO247

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IKW30N60DTP datasheet

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 ikw30n60dtp.pdf pdf_icon

IKW30N60DTP

IGBT TRENCHSTOPTM Performance technology copacked with RAPID 1 fast anti-parallel diode IKW30N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW30N60DTP TRENCHSTOPTM Performance Series High speed IGBT in Trench and Fieldstop technology C Features TRENCHSTOPTM technology offering very low V CEsat low turn-off losses

 6.1. Size:1976K  infineon
 aikw30n60ct.pdf pdf_icon

IKW30N60DTP

AIKW30N60CT TRENCHSTOPTM Series Low Loss DuoPack IGBT in TRENCHSTOPTM and Fieldstop technology with soft, fast recovery antiparallel Emitter Controlled diode C Features Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.) CE(sat) Maximum junction temperature 175 C G Dynamically stress tested E Shor

 6.2. Size:1641K  infineon
 ikw30n60h3 rev1 2g.pdf pdf_icon

IKW30N60DTP

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW30N60H3 600V high speed switching series third generation Datasheet Industrial & Multimarket IKW30N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode C Features TREN

 6.3. Size:899K  infineon
 ikw30n60trev2 3g.pdf pdf_icon

IKW30N60DTP

IKW30N60T TrenchStop Series q Low Loss DuoPack IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5 s G E Designed for - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi

MOSTRAR MÁS

Otros transistores... IKQ120N60T, IKQ40N120CH3, IKQ40N120CT2, IKQ50N120CH3, IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, FGH40N60SFD, IKW30N65ES5, IKW40N120CS6, IKW40N60DTP, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5