IKW30N60DTP IGBT. Datasheet pdf. Equivalent
Type Designator: IKW30N60DTP
Type: IGBT + Anti-Parallel Diode
Marking Code: K30DDTP
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 200 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 53 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Qgⓘ - Total Gate Charge, typ: 130 nC
Package: TO247
IKW30N60DTP Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW30N60DTP Datasheet (PDF)
ikw30n60dtp.pdf
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ikw30n60t.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol
ikw30n60h3.pdf
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Datasheet: IKQ120N60T , IKQ40N120CH3 , IKQ40N120CT2 , IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , MBQ60T65PES , IKW30N65ES5 , IKW40N120CS6 , IKW40N60DTP , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 .
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