IKW30N60DTP IGBT. Datasheet pdf. Equivalent
Type Designator: IKW30N60DTP
Type: IGBT + Anti-Parallel Diode
Marking Code: K30DDTP
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 200
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 53
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 21
Collector Capacity (Cc), typ, pF: 58
Total Gate Charge (Qg), typ, nC: 130
Package: TO247
IKW30N60DTP Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW30N60DTP Datasheet (PDF)
ikw30n60dtp.pdf
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aikw30n60ct.pdf
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ikw30n60trev2 3g.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi
ikw30n60t.pdf
IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol
ikw30n60h3.pdf
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Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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