Справочник IGBT. IKW30N60DTP

 

IKW30N60DTP - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: IKW30N60DTP
   Тип транзистора: IGBT + Diode
   Маркировка: K30DDTP
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 200 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 53 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 5.7 V
   Tjⓘ - Максимальная температура перехода: 175 ℃
   trⓘ - Время нарастания типовое: 21 nS
   Coesⓘ - Выходная емкость, типовая: 58 pF
   Qgⓘ - Общий заряд затвора, typ: 130 nC
   Тип корпуса: TO247

 Аналог (замена) для IKW30N60DTP

 

 

IKW30N60DTP Datasheet (PDF)

 ..1. Size:1541K  infineon
 ikw30n60dtp.pdf

IKW30N60DTP IKW30N60DTP

IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW30N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW30N60DTPTRENCHSTOPTM Performance SeriesHigh speed IGBT in Trench and Fieldstop technologyCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-off losses

 6.1. Size:1976K  infineon
 aikw30n60ct.pdf

IKW30N60DTP IKW30N60DTP

AIKW30N60CTTRENCHSTOPTM SeriesLow Loss DuoPack: IGBT in TRENCHSTOPTM and Fieldstop technologywith soft, fast recovery antiparallel Emitter Controlled diodeCFeatures: Automotive AEC-Q101 qualified Designed for DC/AC converters for Automotive Application Very low V 1.5V (typ.)CE(sat) Maximum junction temperature 175CG Dynamically stress testedE Shor

 6.2. Size:1641K  infineon
 ikw30n60h3 rev1 2g.pdf

IKW30N60DTP IKW30N60DTP

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW30N60H3600V high speed switching series third generationDatasheetIndustrial & MultimarketIKW30N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TREN

 6.3. Size:899K  infineon
 ikw30n60trev2 3g.pdf

IKW30N60DTP IKW30N60DTP

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in TrenchStop and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply TrenchStop and Fi

 6.4. Size:397K  infineon
 ikw30n60t.pdf

IKW30N60DTP IKW30N60DTP

IKW30N60T TrenchStop Series q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 C Short circuit withstand time 5s GE Designed for : - Frequency Converters - Uninterruptible Power Supply Trench and Fieldstop technol

 6.5. Size:2185K  infineon
 ikw30n60h3.pdf

IKW30N60DTP IKW30N60DTP

IGBTHigh speed DuoPack: IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel diodeIKW30N60H3600V high speed switching series third generationData sheetIndustrial Power ControlIKW30N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel diodeCFeatures:TRE

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