IKW40N60DTP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N60DTP
Tipo de transistor: IGBT + Diode
Código de marcado: K40DDTP
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 246
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 67
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.6
Tensión máxima de puerta-umbral |VGE(th)|, V: 5.7
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 30
Capacitancia de salida (Cc), typ, pF: 76
Carga total de la puerta (Qg), typ, nC: 177
Paquete / Cubierta: TO247
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IKW40N60DTP Datasheet (PDF)
ikw40n60dtp.pdf
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ikw40n65f5.pdf
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Otros transistores... IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , FGH60N60SMD , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 .
Liste
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