IKW40N60DTP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N60DTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 246 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 76 pF
Paquete / Cubierta: TO247
Búsqueda de reemplazo de IKW40N60DTP IGBT
IKW40N60DTP Datasheet (PDF)
ikw40n60dtp.pdf
IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW40N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW40N60DTPTRENCHSTOPTM Performance Series600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-
ikw40n60h3.pdf
IGBTHigh speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recoveryanti-parallel diodeIKW40N60H3600V DuoPack IGBT and DiodeHigh speed switching series third generationData sheetIndustrial Power ControlIKW40N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel d
ikw40n60h3 rev2 1g.pdf
IGBTHigh speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recoveryanti-parallel diodeIKW40N60H3600V DuoPack IGBT and DiodeHigh speed switching series third generationData SheetIndustrial & MultimarketIKW40N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel d
aikw40n65df5.pdf
AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
Otros transistores... IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , GT30J127 , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 .
History: HGT1S3N60B3S | HGT1S12N60C3DRS | HGT1S3N60C3D | HGT1S3N60C3DS9A
History: HGT1S3N60B3S | HGT1S12N60C3DRS | HGT1S3N60C3D | HGT1S3N60C3DS9A
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
Popular searches
2sa777 replacement | 2sc828 transistor | 2sd357 | 110n8f6 mosfet datasheet | 2sc458 datasheet | irfz48 | bf494 transistor equivalent | 2sc458 pinout













