IKW40N60DTP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IKW40N60DTP  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 246 W

|Vce|ⓘ - Tensión máxima colector-emisor: 600 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 30 nS

Coesⓘ - Capacitancia de salida, typ: 76 pF

Encapsulados: TO247

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IKW40N60DTP datasheet

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IKW40N60DTP

IGBT TRENCHSTOPTM Performance technology copacked with RAPID 1 fast anti-parallel diode IKW40N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW40N60DTP TRENCHSTOPTM Performance Series 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series C Features TRENCHSTOPTM technology offering very low V CEsat low turn-

 6.1. Size:2103K  infineon
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IKW40N60DTP

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N60H3 600V DuoPack IGBT and Diode High speed switching series third generation Data sheet Industrial Power Control IKW40N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel d

 6.2. Size:1769K  infineon
ikw40n60h3 rev2 1g.pdf pdf_icon

IKW40N60DTP

IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N60H3 600V DuoPack IGBT and Diode High speed switching series third generation Data Sheet Industrial & Multimarket IKW40N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel d

 7.1. Size:1992K  infineon
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IKW40N60DTP

AIKW40N65DF5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low gate charge Q G E IGBT copacked with RAPID 1 f

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