IKW40N60DTP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N60DTP 📄📄
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 246 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
Tjⓘ - Temperatura máxima de unión: 175 ℃
CARACTERÍSTICAS ELÉCTRICAS
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 76 pF
Encapsulados: TO247
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IKW40N60DTP datasheet
ikw40n60dtp.pdf
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Otros transistores... IKQ50N120CH3, IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, GT30J127, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, IKW75N65ES5, IKY40N120CH3, IKY40N120CS6
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