IKW40N60DTP - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKW40N60DTP
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 246 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 67 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
Tjⓘ - Temperatura máxima de unión: 175 ℃
trⓘ - Tiempo de subida, typ: 30 nS
Coesⓘ - Capacitancia de salida, typ: 76 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IKW40N60DTP Datasheet (PDF)
ikw40n60dtp.pdf

IGBTTRENCHSTOPTM Performance technology copacked with RAPID 1fast anti-parallel diodeIKW40N60DTP600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesData sheetIndustrial Power ControlIKW40N60DTPTRENCHSTOPTM Performance Series600V DuoPack IGBT and diodeTRENCHSTOPTM Performance seriesCFeatures:TRENCHSTOPTM technology offering very low VCEsat low turn-
ikw40n60h3.pdf

IGBTHigh speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recoveryanti-parallel diodeIKW40N60H3600V DuoPack IGBT and DiodeHigh speed switching series third generationData sheetIndustrial Power ControlIKW40N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel d
ikw40n60h3 rev2 1g.pdf

IGBTHigh speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recoveryanti-parallel diodeIKW40N60H3600V DuoPack IGBT and DiodeHigh speed switching series third generationData SheetIndustrial & MultimarketIKW40N60H3High speed switching series third generationHigh speed DuoPack: IGBT in Trench and Fieldstop technology with soft, fastrecovery anti-parallel d
aikw40n65df5.pdf

AIKW40N65DF5High speed switching series fifth generationHigh speed fast IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antiparallel diodeCFeatures and Benefits: High speed F5 technology offering: Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltageG Low gate charge QGE IGBT copacked with RAPID 1 f
Otros transistores... IKQ50N120CH3 , IKQ50N120CT2 , IKQ75N120CS6 , IKQ75N120CT2 , IKW15N120BH6 , IKW30N60DTP , IKW30N65ES5 , IKW40N120CS6 , SGT40N60NPFDPN , IKW40N65ES5 , IKW50N60DTP , IKW50N65EH5 , IKW75N60H3 , IKW75N65EH5 , IKW75N65ES5 , IKY40N120CH3 , IKY40N120CS6 .
History: 2MBI150VA-060-50 | DF160R12W2H3_B11 | CM300DU-12NFH | TT075U065FBC | 2SH13 | MMG200Q120B6HN
History: 2MBI150VA-060-50 | DF160R12W2H3_B11 | CM300DU-12NFH | TT075U065FBC | 2SH13 | MMG200Q120B6HN



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