IKW40N60DTP datasheet, аналоги, основные параметры
Наименование: IKW40N60DTP 📄📄
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 246 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 600 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 67 A @25℃
Tj ⓘ - Максимальная температура перехода: 175 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 1.6 V @25℃
tr ⓘ - Время нарастания типовое: 30 nS
Coesⓘ - Выходная емкость, типовая: 76 pF
Тип корпуса: TO247
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Аналог (замена) для IKW40N60DTP
- подбор ⓘ IGBT транзистора по параметрам
IKW40N60DTP даташит
ikw40n60dtp.pdf
IGBT TRENCHSTOPTM Performance technology copacked with RAPID 1 fast anti-parallel diode IKW40N60DTP 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series Data sheet Industrial Power Control IKW40N60DTP TRENCHSTOPTM Performance Series 600V DuoPack IGBT and diode TRENCHSTOPTM Performance series C Features TRENCHSTOPTM technology offering very low V CEsat low turn-
ikw40n60h3.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N60H3 600V DuoPack IGBT and Diode High speed switching series third generation Data sheet Industrial Power Control IKW40N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel d
ikw40n60h3 rev2 1g.pdf
IGBT High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel diode IKW40N60H3 600V DuoPack IGBT and Diode High speed switching series third generation Data Sheet Industrial & Multimarket IKW40N60H3 High speed switching series third generation High speed DuoPack IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel d
aikw40n65df5.pdf
AIKW40N65DF5 High speed switching series fifth generation High speed fast IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1 fast and soft antiparallel diode C Features and Benefits High speed F5 technology offering Best-in-Class efficiency in hard switching and resonant topologies 650V breakdown voltage G Low gate charge Q G E IGBT copacked with RAPID 1 f
Другие IGBT... IKQ50N120CH3, IKQ50N120CT2, IKQ75N120CS6, IKQ75N120CT2, IKW15N120BH6, IKW30N60DTP, IKW30N65ES5, IKW40N120CS6, GT50JR22, IKW40N65ES5, IKW50N60DTP, IKW50N65EH5, IKW75N60H333, IKW75N65EH5, IKW75N65ES5, IKY40N120CH3, IKY40N120CS6
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Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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