IKW40N60DTP IGBT. Datasheet pdf. Equivalent
Type Designator: IKW40N60DTP
Type: IGBT + Anti-Parallel Diode
Marking Code: K40DDTP
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 246
Maximum Collector-Emitter Voltage |Vce|, V: 600
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 67
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.6
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 30
Collector Capacity (Cc), typ, pF: 76
Total Gate Charge (Qg), typ, nC: 177
Package: TO247
IKW40N60DTP Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKW40N60DTP Datasheet (PDF)
ikw40n60dtp.pdf
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Reverse Conduction SeriesReverse conducting IGBT with monolithic body diodeIKW40N65WR5Data sheetInductrial Power ControlIKW40N65WR5Reverse Conduction SeriesReverse conducting IGBT with monolithic body diodeCFeatures: Powerful monolithic diode optimized for ZCS applications TRENCHSTOPTM 5 technology applications offers:- high ruggedness, temperature stable behavior
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IGBTHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKW40N65H5A650V DuoPack IGBT and diodeHigh speed switching series fifth generationData sheetIndustrial Power ControlIKW40N65H5AHigh speed switching series fifth generationHigh speed 5 FAST IGBT in TRENCHSTOPTM 5 technology copacked withRAPID 1 fast and soft antipar
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Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
![IKW40N60DTP](https://alltransistors.com/images/us.png)
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