IKZ50N65EH5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IKZ50N65EH5
Tipo de transistor: IGBT + Diode
Código de marcado: K50EEH5
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 273
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 85
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.65
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.8
Temperatura máxima de unión (Tj), ℃: 175
Tiempo de subida (tr), typ, nS: 7
Capacitancia de salida (Cc), typ, pF: 90
Carga total de la puerta (Qg), typ, nC: 109
Paquete / Cubierta: TO247-4
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IKZ50N65EH5 Datasheet (PDF)
ikz50n65eh5.pdf
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ikz50n65es5.pdf
IKZ50N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio
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