IKZ50N65EH5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKZ50N65EH5
Type: IGBT + Anti-Parallel Diode
Marking Code: K50EEH5
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 273 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 85 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 4.8 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 7 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Qgⓘ - Total Gate Charge, typ: 109 nC
Package: TO247-4
IKZ50N65EH5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKZ50N65EH5 Datasheet (PDF)
ikz50n65eh5.pdf
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ikz50n65es5.pdf
IKZ50N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio
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