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IKZ50N65ES5 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IKZ50N65ES5
   Tipo de transistor: IGBT + Diode
   Código de marcado: K50EES5
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 274 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.35 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 4.8 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 22 nS
   Coesⓘ - Capacitancia de salida, typ: 88 pF
   Qgⓘ - Carga total de la puerta, typ: 120 nC
   Paquete / Cubierta: TO247-4
 

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IKZ50N65ES5 Datasheet (PDF)

 ..1. Size:1842K  infineon
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IKZ50N65ES5

IKZ50N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio

 5.1. Size:2181K  infineon
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IKZ50N65ES5

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ50N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ50N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene

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History: IRGB4615D | IXBV22N300S

 

 
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