IKZ50N65ES5 Datasheet and Replacement
Type Designator: IKZ50N65ES5
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 274 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 22 nS
Coesⓘ - Output Capacitance, typ: 88 pF
Package: TO247-4
- IGBT Cross-Reference
IKZ50N65ES5 Datasheet (PDF)
ikz50n65es5.pdf

IKZ50N65ES5TRENCHSTOPTM 5 soft switching IGBTTRENCHSTOPTM 5 high speed soft switching IGBT copacked with full currentrated RAPID 1 fast and soft antiparallel diodeFeatures and Benefits:High speed S5 technology offering High speed smooth switching device for hard & soft switching Very Low V , 1.42V at nominal currentCEsat Plug and play replacement of previous generatio
ikz50n65eh5.pdf

IGBTHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeIKZ50N65EH5650V DuoPack IGBT and diodeHigh speed series fifth generationData sheetIndustrial Power ControlIKZ50N65EH5High speed series fifth generationHigh speed 5 IGBT in TRENCHSTOPTM 5 technology copacked with RAPID 1fast and soft antiparallel diodeFeatures and Bene
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: XD025H120CX1S3 | FF200R12KT3 | TT015N120EQ | BT15T60A8F | IQGB300N120I4 | FGH75T65UPD-F085 | 2MBI900VXA-120P-50
Keywords - IKZ50N65ES5 transistor datasheet
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History: XD025H120CX1S3 | FF200R12KT3 | TT015N120EQ | BT15T60A8F | IQGB300N120I4 | FGH75T65UPD-F085 | 2MBI900VXA-120P-50



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