IKZ50N65ES5 IGBT. Datasheet pdf. Equivalent
Type Designator: IKZ50N65ES5
Type: IGBT + Anti-Parallel Diode
Marking Code: K50EES5
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 274
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.35
Maximum G-E Threshold Voltag |VGE(th)|, V: 4.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 22
Collector Capacity (Cc), typ, pF: 88
Total Gate Charge (Qg), typ, nC: 120
Package: TO247-4
IKZ50N65ES5 Transistor Equivalent Substitute - IGBT Cross-Reference Search
IKZ50N65ES5 Datasheet (PDF)
ikz50n65es5.pdf
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