IRG4BC20UDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRG4BC20UDPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 60
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 13
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.85
Tensión máxima de puerta-umbral |VGE(th)|, V: 6
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 15
Capacitancia de salida (Cc), typ, pF: 39
Carga total de la puerta (Qg), typ, nC: 27
Paquete / Cubierta: TO220AB
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IRG4BC20UDPBF Datasheet (PDF)
irg4bc20udpbf.pdf
PD - 94909AIRG4BC20UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBTSOFT RECOVERY DIODEFeaturesC UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85V parameter distribution and higher efficiency thanG Generati
irg4bc20ud.pdf
PD-91449CIRG4BC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution and higher efficiency than Generation 3
irg4bc20ud-s.pdf
PD- 94077IRG4BC20UD-S UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution
irg4bc20u.pdf
D DI I TI T D T I T I T FeaturesFeaturesFeaturesFeaturesFeaturesC UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85VG parameter distribution and higher efficiency than Generatio
Otros transistores... IKY50N120CH3 , IKY75N120CH3 , IKY75N120CS6 , IKZ50N65EH5 , IKZ50N65ES5 , IKZ75N65EH5 , IKZ75N65ES5 , IRG4BC20KDPBF , IRG7IC28U , IRG4IBC10UDPBF , IRG4PC30FPBF , IRG4PC30UDPBF , IRG4PC40FDPBF , IRG4PC50FPBF , IRG4PC50SDPBF , IRG4PC50UDPBF , IRG4PC50UPBF .
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