All IGBT. IRG4BC20UDPBF Datasheet

 

IRG4BC20UDPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRG4BC20UDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 60
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 13
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.85
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 39
   Total Gate Charge (Qg), typ, nC: 27
   Package: TO220AB

 IRG4BC20UDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRG4BC20UDPBF Datasheet (PDF)

 ..1. Size:371K  infineon
 irg4bc20udpbf.pdf

IRG4BC20UDPBF IRG4BC20UDPBF

PD - 94909AIRG4BC20UDPbFINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST UltraFast CoPack IGBTSOFT RECOVERY DIODEFeaturesC UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200VCES = 600V kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85V parameter distribution and higher efficiency thanG Generati

 4.1. Size:238K  international rectifier
 irg4bc20ud.pdf

IRG4BC20UDPBF IRG4BC20UDPBF

PD-91449CIRG4BC20UD UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution and higher efficiency than Generation 3

 4.2. Size:240K  international rectifier
 irg4bc20ud-s.pdf

IRG4BC20UDPBF IRG4BC20UDPBF

PD- 94077IRG4BC20UD-S UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITHULTRAFAST SOFT RECOVERY DIODECFeaturesFeaturesFeaturesFeaturesFeatures UltraFast: Optimized for high operating frequenciesVCES = 600V 8-40 kHz in hard switching, >200kHz in resonant modeVCE(on) typ. = 1.85V Generation 4 IGBT design provides tighter para-G meter distribution

 5.1. Size:173K  international rectifier
 irg4bc20u.pdf

IRG4BC20UDPBF IRG4BC20UDPBF

D DI I TI T D T I T I T FeaturesFeaturesFeaturesFeaturesFeaturesC UltraFast: optimized for high operatingVCES = 600V frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode Generation 4 IGBT design provides tighterVCE(on) typ. = 1.85VG parameter distribution and higher efficiency than Generatio

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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