IRGP20B60PDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP20B60PDPBF
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 220
Tensión máxima colector-emisor |Vce|, V: 600
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 40
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.05
Tensión máxima de puerta-umbral |VGE(th)|, V: 5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 5
Capacitancia de salida (Cc), typ, pF: 130
Carga total de la puerta (Qg), typ, nC: 68
Paquete / Cubierta: TO247
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IRGP20B60PDPBF Datasheet (PDF)
irgp20b60pdpbf.pdf
PD - 95558SMPS IGBTIRGP20B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Lead-FreeRCE(on) typ. = 158mEFeaturesID
irgp20b60pd.pdf
PD - 94626SMPS IGBT IRGP20B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters RCE(on) typ. = 158mFeaturesE NPT Technology, Po
irgp20b120ud-e.pdf
PD- 93817IRGP20B120UD-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V UltraFast Non Punch Through (NPT)TechnologyVCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characte
irgp20b120u-e.pdf
PD- 94117IRGP20B120U-EINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeatures UltraFast Non Punch Through (NPT)CTechnology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature CoefficientVCE(on) typ. = 3.05VG Extended lead TO-247 packageVGE = 15V, IC = 20A, 25CEBenefitsn-channel Benchmark efficiency
Otros transistores... IRGIB4630DPBF , IRGP4630DPBF , IRGS4630DPBF , IRGB4B60KD1PBF , IRGS4B60KD1PBF , IRGSL4B60KD1PBF , IRGIB10B60KD1P , IRGIB15B60KD1P , SGT60N60FD1P7 , IRGP35B60PDPBF , IRGP4062DPBF , IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF .
Liste
Recientemente añadidas las descripciónes de los transistores
IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ