IRGP20B60PDPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRGP20B60PDPBF
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 220 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 40 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 5 nS
Coesⓘ - Capacitancia de salida, typ: 130 pF
Paquete / Cubierta: TO247
- Selección de transistores por parámetros
IRGP20B60PDPBF Datasheet (PDF)
irgp20b60pdpbf.pdf

PD - 95558SMPS IGBTIRGP20B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Lead-FreeRCE(on) typ. = 158mEFeaturesID
irgp20b60pd.pdf

PD - 94626SMPS IGBT IRGP20B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters RCE(on) typ. = 158mFeaturesE NPT Technology, Po
irgp20b120ud-e.pdf

PD- 93817IRGP20B120UD-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V UltraFast Non Punch Through (NPT)TechnologyVCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characte
irgp20b120u-e.pdf

PD- 94117IRGP20B120U-EINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeatures UltraFast Non Punch Through (NPT)CTechnology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature CoefficientVCE(on) typ. = 3.05VG Extended lead TO-247 packageVGE = 15V, IC = 20A, 25CEBenefitsn-channel Benchmark efficiency
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: MMG300K120U6HN | IXGH28N60BD1 | IXGP48N60C3 | HGTP7N60C3D | IKQ100N60TA | APT50GP60B
History: MMG300K120U6HN | IXGH28N60BD1 | IXGP48N60C3 | HGTP7N60C3D | IKQ100N60TA | APT50GP60B



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