All IGBT. IRGP20B60PDPBF Datasheet

 

IRGP20B60PDPBF IGBT. Datasheet pdf. Equivalent


   Type Designator: IRGP20B60PDPBF
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 5 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 68 nC
   Package: TO247

 IRGP20B60PDPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

IRGP20B60PDPBF Datasheet (PDF)

 ..1. Size:401K  infineon
 irgp20b60pdpbf.pdf

IRGP20B60PDPBF IRGP20B60PDPBF

PD - 95558SMPS IGBTIRGP20B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Lead-FreeRCE(on) typ. = 158mEFeaturesID

 3.1. Size:740K  international rectifier
 irgp20b60pd.pdf

IRGP20B60PDPBF IRGP20B60PDPBF

PD - 94626SMPS IGBT IRGP20B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters RCE(on) typ. = 158mFeaturesE NPT Technology, Po

 7.1. Size:133K  international rectifier
 irgp20b120ud-e.pdf

IRGP20B60PDPBF IRGP20B60PDPBF

PD- 93817IRGP20B120UD-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V UltraFast Non Punch Through (NPT)TechnologyVCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characte

 7.2. Size:112K  international rectifier
 irgp20b120u-e.pdf

IRGP20B60PDPBF IRGP20B60PDPBF

PD- 94117IRGP20B120U-EINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeatures UltraFast Non Punch Through (NPT)CTechnology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature CoefficientVCE(on) typ. = 3.05VG Extended lead TO-247 packageVGE = 15V, IC = 20A, 25CEBenefitsn-channel Benchmark efficiency

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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