All IGBT. IRGP20B60PDPBF Datasheet

 

IRGP20B60PDPBF Datasheet and Replacement


   Type Designator: IRGP20B60PDPBF
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 220 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 5 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Package: TO247
      - IGBT Cross-Reference

 

IRGP20B60PDPBF Datasheet (PDF)

 ..1. Size:401K  international rectifier
irgp20b60pdpbf.pdf pdf_icon

IRGP20B60PDPBF

PD - 95558SMPS IGBTIRGP20B60PDPbFWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters Lead-FreeRCE(on) typ. = 158mEFeaturesID

 3.1. Size:740K  international rectifier
irgp20b60pd.pdf pdf_icon

IRGP20B60PDPBF

PD - 94626SMPS IGBT IRGP20B60PDWARP2 SERIES IGBT WITHULTRAFAST SOFT RECOVERY DIODEC VCES = 600VApplicationsVCE(on) typ. = 2.05V Telecom and Server SMPS@ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power SuppliesEquivalent MOSFET Consumer Electronics Power SuppliesGParameters RCE(on) typ. = 158mFeaturesE NPT Technology, Po

 7.1. Size:133K  international rectifier
irgp20b120ud-e.pdf pdf_icon

IRGP20B60PDPBF

PD- 93817IRGP20B120UD-E UltraFast CoPack IGBTINSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODECFeaturesVCES = 1200V UltraFast Non Punch Through (NPT)TechnologyVCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25C UltraSoft Diode Recovery Characte

 7.2. Size:112K  international rectifier
irgp20b120u-e.pdf pdf_icon

IRGP20B60PDPBF

PD- 94117IRGP20B120U-EINSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBTFeatures UltraFast Non Punch Through (NPT)CTechnology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature CoefficientVCE(on) typ. = 3.05VG Extended lead TO-247 packageVGE = 15V, IC = 20A, 25CEBenefitsn-channel Benchmark efficiency

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | 2SH29

Keywords - IRGP20B60PDPBF transistor datasheet

 IRGP20B60PDPBF cross reference
 IRGP20B60PDPBF equivalent finder
 IRGP20B60PDPBF lookup
 IRGP20B60PDPBF substitution
 IRGP20B60PDPBF replacement

 

 
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