IRGP20B60PDPBF - аналоги, параметры транзистора

IRGP20B60PDPBF даташит

..1. Size:401K international rectifier
irgp20b60pdpbf.pdf pdf_icon

PD - 95558 SMPS IGBT IRGP20B60PDPbF WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Applications VCE(on) typ. = 2.05V Telecom and Server SMPS @ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET Consumer Electronics Power Supplies G Parameters Lead-Free RCE(on) typ. = 158m E Features ID

3.1. Size:740K international rectifier
irgp20b60pd.pdf pdf_icon

PD - 94626 SMPS IGBT IRGP20B60PD WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Applications VCE(on) typ. = 2.05V Telecom and Server SMPS @ VGE = 15V IC = 13.0A PFC and ZVS SMPS Circuits Uninterruptable Power Supplies Equivalent MOSFET Consumer Electronics Power Supplies G Parameters RCE(on) typ. = 158m Features E NPT Technology, Po

7.1. Size:133K international rectifier
irgp20b120ud-e.pdf pdf_icon

PD- 93817 IRGP20B120UD-E UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features VCES = 1200V UltraFast Non Punch Through (NPT) Technology VCE(on) typ. = 3.05V Low Diode VF (1.67V Typical @ 20A & 25 C) 10 s Short Circuit Capability G Square RBSOA VGE = 15V, IC = 20A, 25 C UltraSoft Diode Recovery Characte

7.2. Size:112K international rectifier
irgp20b120u-e.pdf pdf_icon

PD- 94117 IRGP20B120U-E INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features UltraFast Non Punch Through (NPT) C Technology 10 s Short Circuit capability VCES = 1200V Square RBSOA Positive VCE(on) Temperature Coefficient VCE(on) typ. = 3.05V G Extended lead TO-247 package VGE = 15V, IC = 20A, 25 C E Benefits n-channel Benchmark efficiency

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