IRGP4069DPBF Todos los transistores

 

IRGP4069DPBF - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRGP4069DPBF
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 268 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 600 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 76 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 33 nS
   Coesⓘ - Capacitancia de salida, typ: 197 pF
   Paquete / Cubierta: TO247
 

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IRGP4069DPBF Datasheet (PDF)

 ..1. Size:295K  international rectifier
 irgp4069dpbf.pdf pdf_icon

IRGP4069DPBF

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.1. Size:309K  international rectifier
 irgp4069d-e.pdf pdf_icon

IRGP4069DPBF

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 5.2. Size:309K  international rectifier
 irgp4069d.pdf pdf_icon

IRGP4069DPBF

PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv

 6.1. Size:268K  international rectifier
 irgp4069.pdf pdf_icon

IRGP4069DPBF

PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient

MOSTRAR MÁS

Otros transistores... IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF , IRGP4068DPBF , IRGP4068D-EPBF , IKW40T120 , IRGP4650DPBF , IRGP4660DPBF , IRGP50B60PD1PBF , IRGP6690DPBF , IRGP6690D-EPBF , IRGPS46160DPBF , IRGS4640DPBF , IRGSL4640DPBF .

 

 
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