IRGP4069DPBF PDF and Equivalents Search

 

IRGP4069DPBF Specs and Replacement

Type Designator: IRGP4069DPBF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 268 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 76 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 33 nS

Coesⓘ - Output Capacitance, typ: 197 pF

Package: TO247

 IRGP4069DPBF Substitution

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IRGP4069DPBF datasheet

 ..1. Size:295K  international rectifier
 irgp4069dpbf.pdf pdf_icon

IRGP4069DPBF

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 5.1. Size:309K  international rectifier
 irgp4069d-e.pdf pdf_icon

IRGP4069DPBF

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 5.2. Size:309K  international rectifier
 irgp4069d.pdf pdf_icon

IRGP4069DPBF

PD - 97425 IRGP4069DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH IRGP4069D-EPbF ULTRAFAST SOFT RECOVERY DIODE Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM Positiv... See More ⇒

 6.1. Size:268K  international rectifier
 irgp4069.pdf pdf_icon

IRGP4069DPBF

PD - 97426 IRGP4069PbF INSULATED GATE BIPOLAR TRANSISTOR IRGP4069-EPbF Features C Low VCE (ON) Trench IGBT Technology VCES = 600V Low Switching Losses Maximum Junction Temperature 175 C IC(Nominal) = 35A 5 S short circuit SOA Square RBSOA G tSC 5 s, TJ(max) = 175 C 100% of The Parts Tested for ILM E Positive VCE (ON) Temperature Coefficient ... See More ⇒

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Specs: IRGB4062DPBF, IRGP4062D-EPBF, IRGP4063DPBF, IRGP4063PBF, IRGP4066DPBF, IRGP4066D-EPBF, IRGP4068DPBF, IRGP4068D-EPBF, NGTB75N65FL2, IRGP4650DPBF, IRGP4660DPBF, IRGP50B60PD1PBF, IRGP6690DPBF, IRGP6690D-EPBF, IRGPS46160DPBF, IRGS4640DPBF, IRGSL4640DPBF

Keywords - IRGP4069DPBF transistor spec

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