IRGP4069DPBF IGBT. Datasheet pdf. Equivalent
Type Designator: IRGP4069DPBF
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 268 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 76 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 33 nS
Coesⓘ - Output Capacitance, typ: 197 pF
Qgⓘ - Total Gate Charge, typ: 69 nC
Package: TO247
IRGP4069DPBF Transistor Equivalent Substitute - IGBT Cross-Reference Search
IRGP4069DPBF Datasheet (PDF)
irgp4069dpbf.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4069d-e.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4069d.pdf
PD - 97425IRGP4069DPbFINSULATED GATE BIPOLAR TRANSISTOR WITHIRGP4069D-EPbFULTRAFAST SOFT RECOVERY DIODEFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOAG tSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILM Positiv
irgp4069.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
irgp4069-e.pdf
PD - 97426IRGP4069PbFINSULATED GATE BIPOLAR TRANSISTORIRGP4069-EPbFFeaturesC Low VCE (ON) Trench IGBT TechnologyVCES = 600V Low Switching Losses Maximum Junction Temperature 175 CIC(Nominal) = 35A 5 S short circuit SOA Square RBSOA GtSC 5s, TJ(max) = 175C 100% of The Parts Tested for ILME Positive VCE (ON) Temperature Coefficient
Datasheet: IRGB4062DPBF , IRGP4062D-EPBF , IRGP4063DPBF , IRGP4063PBF , IRGP4066DPBF , IRGP4066D-EPBF , IRGP4068DPBF , IRGP4068D-EPBF , FGL60N100BNTD , IRGP4650DPBF , IRGP4660DPBF , IRGP50B60PD1PBF , IRGP6690DPBF , IRGP6690D-EPBF , IRGPS46160DPBF , IRGS4640DPBF , IRGSL4640DPBF .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2