DGW50N65CTL1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DGW50N65CTL1  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 326 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 85 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃

trⓘ - Tiempo de subida, typ: 56 nS

Encapsulados: TO247

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DGW50N65CTL1 datasheet

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 dgw50n65ctl1.pdf pdf_icon

DGW50N65CTL1

RoHS COMPLIANT DGW50N65CTL1 IGBT Discrete V 650 V CE I 50 A C V CE(SAT) 1.60 V I = A C 50 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Posi

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DGW50N65CTL1

RoHS DGW50N65CTH COMPLIANT IGBT Discrete V 650 V CE I 50 A C V I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru

 6.1. Size:398K  cn yangzhou yangjie elec
 dgw50n65bth.pdf pdf_icon

DGW50N65CTL1

RoHS DGW50N65BTH COMPLIANT IGBT Discrete V 650 V CE I 50 A C V I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru

Otros transistores... DGW40N120CTH, DGW40N120CTH0, DGW40N120CTL, DGW40N65BTH, DGW40N65CTH, DGW40N65CTL, DGW50N65BTH, DGW50N65CTH, FGH60N60SMD, DGW60N65BTH, DGW75N65CTL1, ATGH40N120F2DR, TGAF40N60F2D, TGAN15N120FDR, TGAN15S135FD, TGAN20N135F3D, TGAN20N150FD