DGW50N65CTL1 IGBT. Datasheet pdf. Equivalent
Type Designator: DGW50N65CTL1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 326 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 85 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.85 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 56 nS
Qgⓘ - Total Gate Charge, typ: 450 nC
Package: TO247
DGW50N65CTL1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
DGW50N65CTL1 Datasheet (PDF)
dgw50n65ctl1.pdf
RoHS COMPLIANT DGW50N65CTL1 IGBT Discrete V 650 V CEI 50 A CVCE(SAT) 1.60 V I = AC 50 Applications High frequency switching application Resonant converters Uninterruptible power supply Circuit Welding converters Features High speed smooth switching device for hard & soft switching Maximum junction temperature 175 Posi
dgw50n65cth.pdf
RoHS DGW50N65CTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
dgw50n65bth.pdf
RoHS DGW50N65BTH COMPLIANT IGBT Discrete V 650 V CEI 50 A CV I = A 1.95 V CE(SAT) C 50 Applications High frequency switching application Medical applications Circuit Uninterruptible power supply Motion/servo control Features Low switching losses Maximum junction temperature 175 Positive temperature coefficient High ru
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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