TGAN40N120FDR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: TGAN40N120FDR
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 500 W
|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 25 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 28 nS
Coesⓘ - Capacitancia de salida, typ: 170 pF
Paquete / Cubierta: TO3PN
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TGAN40N120FDR Datasheet (PDF)
tgan40n120fdr.pdf
TGAN40N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N120FDR TO-3P
tgan40n120f2d.pdf
TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A
tgan40n120f2dw.pdf
TGAN40N120F2DWField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsWelder, UPS, Inverter, SolarDevice Package Marking RemarkTGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHSAbsolute Maximu
tgan40n135fd.pdf
TGAN40N135FD Field Stop Trench IGBTFeatures 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ovens Soft Switching Applicat
tgan40n110fd.pdf
TGAN40N110FDField Stop Trench IGBTFeatures 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN40N110FD TO-3PN TGAN40N110FD RoHSAbsolu
Otros transistores... TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , RJH30E2DPP , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD .
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