Справочник IGBT. TGAN40N120FDR

 

TGAN40N120FDR - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: TGAN40N120FDR
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Pcⓘ - Максимальная рассеиваемая мощность: 500 W
   |Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
   |Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 25 V
   |Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
   |VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
   |VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 7.5 V
   Tjⓘ - Максимальная температура перехода: 150 ℃
   trⓘ - Время нарастания типовое: 28 nS
   Coesⓘ - Выходная емкость, типовая: 170 pF
   Qgⓘ - Общий заряд затвора, typ: 320 nC
   Тип корпуса: TO3PN

 Аналог (замена) для TGAN40N120FDR

 

 

TGAN40N120FDR Datasheet (PDF)

 ..1. Size:945K  trinnotech
tgan40n120fdr.pdf

TGAN40N120FDR
TGAN40N120FDR

TGAN40N120FDRField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N120FDR TO-3P

 3.1. Size:921K  trinnotech
tgan40n120f2d.pdf

TGAN40N120FDR
TGAN40N120FDR

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A

 3.2. Size:866K  trinnotech
tgan40n120f2dw.pdf

TGAN40N120FDR
TGAN40N120FDR

TGAN40N120F2DWField Stop Trench IGBTFeatures 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsWelder, UPS, Inverter, SolarDevice Package Marking RemarkTGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHSAbsolute Maximu

 6.1. Size:865K  trinnotech
tgan40n135fd.pdf

TGAN40N120FDR
TGAN40N120FDR

TGAN40N135FD Field Stop Trench IGBTFeatures 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC QualificationEApplicationsC Induction Heating G Inverterized microwave ovens Soft Switching Applicat

 6.2. Size:938K  trinnotech
tgan40n110fd.pdf

TGAN40N120FDR
TGAN40N120FDR

TGAN40N110FDField Stop Trench IGBTFeatures 1100V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsInduction Heating, Soft switching applicationDevice Package Marking RemarkTGAN40N110FD TO-3PN TGAN40N110FD RoHSAbsolu

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