TGAN40N120FDR PDF and Equivalents Search

 

TGAN40N120FDR Specs and Replacement

Type Designator: TGAN40N120FDR

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 170 pF

Package: TO3PN

 TGAN40N120FDR Substitution

- IGBT ⓘ Cross-Reference Search

 

TGAN40N120FDR datasheet

 ..1. Size:945K  trinnotech
 tgan40n120fdr.pdf pdf_icon

TGAN40N120FDR

TGAN40N120FDR Field Stop Trench IGBT Features 1200V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120FDR TO-3P... See More ⇒

 3.1. Size:921K  trinnotech
 tgan40n120f2d.pdf pdf_icon

TGAN40N120FDR

TGAN40N120F2D Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N120F2D TO-3PN TGAN40N120F2D RoHS A... See More ⇒

 3.2. Size:866K  trinnotech
 tgan40n120f2dw.pdf pdf_icon

TGAN40N120FDR

TGAN40N120F2DW Field Stop Trench IGBT Features 1200V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications Welder, UPS, Inverter, Solar Device Package Marking Remark TGAN40N120F2DW TO-3PN TGAN40N120F2DW RoHS Absolute Maximu... See More ⇒

 6.1. Size:865K  trinnotech
 tgan40n135fd.pdf pdf_icon

TGAN40N120FDR

TGAN40N135FD Field Stop Trench IGBT Features 1350V Field Stop Trench IGBT Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature RoHS Compliant JEDEC Qualification E Applications C Induction Heating G Inverterized microwave ovens Soft Switching Applicat... See More ⇒

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Specs: TGAN20S150FD , TGAN25N120FDR , TGAN30N135FD1 , TGAN30S135FD , TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , IHW20N120R3 , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , TGAN40N65F2DR , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD .

History: VS-GP100TS60SFPBF

Keywords - TGAN40N120FDR transistor spec

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