TGAN40N65F2DR Todos los transistores

 

TGAN40N65F2DR - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN40N65F2DR
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 283 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.6 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 18 nS
   Coesⓘ - Capacitancia de salida, typ: 114 pF
   Paquete / Cubierta: TO3PN
     - Selección de transistores por parámetros

 

TGAN40N65F2DR Datasheet (PDF)

 ..1. Size:890K  trinnotech
 tgan40n65f2dr.pdf pdf_icon

TGAN40N65F2DR

TGAN40N65F2DRField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N

 2.1. Size:957K  trinnotech
 tgan40n65f2ds.pdf pdf_icon

TGAN40N65F2DR

TGAN40N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN40N65F2DS TO-3PN

 6.1. Size:1095K  trinnotech
 tgan40n60fd.pdf pdf_icon

TGAN40N65F2DR

TGAN40N60FDField Stop Trench IGBTFeatures: 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplications :UPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60FD TO-3PN TGAN40N60FD RoHSAbsolute Maximum Ratings

 6.2. Size:882K  trinnotech
 tgan40n60f2d.pdf pdf_icon

TGAN40N65F2DR

TGAN40N60F2DField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationEApplications CGUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN40N60F2D TO-3PN TGAN40N60F2D RoHSAbsolute Maximum Ratings Parameter Symbol Va

MOSTRAR MÁS

Otros transistores... TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , RJH30E2DPP , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS .

History: IXGM25N100 | MMG50HB120H6UN | IXSR35N120BD1 | MM40G3T120B | SGM25PA12A8TFD | IRGI4086 | GD100HFX65C1S

 

 
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