TGAN40N65F2DR Todos los transistores

TGAN40N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N

TGAN40N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN40N65F2DS TO-3PN

TGAN40N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60FD TO-3PN TGAN40N60FD RoHS Absolute Maximum Ratings

TGAN40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60F2D TO-3PN TGAN40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Va

TGAN40N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Motor Inverter Device Package Marking Remark TGAN40N60F2DS TO-3PN TGAN40N60F2DS RoHS Absolute Maximum Ratings Parameter Symbol