TGAN40N65F2DR PDF and Equivalents Search

 

TGAN40N65F2DR Specs and Replacement

Type Designator: TGAN40N65F2DR

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 283 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 18 nS

Coesⓘ - Output Capacitance, typ: 114 pF

Package: TO3PN

 TGAN40N65F2DR Substitution

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TGAN40N65F2DR datasheet

 ..1. Size:890K  trinnotech
tgan40n65f2dr.pdf pdf_icon

TGAN40N65F2DR

TGAN40N65F2DR Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N... See More ⇒

 2.1. Size:957K  trinnotech
tgan40n65f2ds.pdf pdf_icon

TGAN40N65F2DR

TGAN40N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN40N65F2DS TO-3PN ... See More ⇒

 6.1. Size:1095K  trinnotech
tgan40n60fd.pdf pdf_icon

TGAN40N65F2DR

TGAN40N60FD Field Stop Trench IGBT Features 600V Field Stop Trench Technology High Speed Switching Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60FD TO-3PN TGAN40N60FD RoHS Absolute Maximum Ratings... See More ⇒

 6.2. Size:882K  trinnotech
tgan40n60f2d.pdf pdf_icon

TGAN40N65F2DR

TGAN40N60F2D Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E Applications C G UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN40N60F2D TO-3PN TGAN40N60F2D RoHS Absolute Maximum Ratings Parameter Symbol Va... See More ⇒

Specs: TGAN30S160FD , TGAN40N110FD , TGAN40N120F2D , TGAN40N120F2DW , TGAN40N120FDR , TGAN40N135FD , TGAN40N60F2D , TGAN40N60F2DS , IKW75N60T , TGAN40N65F2DS , TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS .

History: SII150N06 | RJH60D7BDPQ-E0 | NGTG15N120FL2 | XP075HFN120CT1R3 | T1200TB25A | TT010N060EQ | VS-GB90SA120U

Keywords - TGAN40N65F2DR transistor spec

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