TGAN80N65F2DS Todos los transistores

 

TGAN80N65F2DS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGAN80N65F2DS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 577 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 69 nS

Coesⓘ - Capacitancia de salida, typ: 230 pF

Encapsulados: TO3PN

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TGAN80N65F2DS datasheet

 ..1. Size:984K  trinnotech
 tgan80n65f2ds.pdf pdf_icon

TGAN80N65F2DS

TGAN80N65F2DS Field Stop Trench IGBT Features 650V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature E C G Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGAN80N65F2DS TO-3PN TGAN8

 6.1. Size:969K  trinnotech
 tgan80n60f2ds.pdf pdf_icon

TGAN80N65F2DS

TGAN80N60F2DS Field Stop Trench IGBT Features 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification E C G Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TGAN80N60F2DS TO-3PN TGAN80N60F2DS RoHS Absolute Maxim

Otros transistores... TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , RJH30E2DPP , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 .

History: TT025N120FQ | NGTB30N65IHL2WG | SPT40N120T1BT8TL

 

 

 

 

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