TGAN80N65F2DS Todos los transistores

 

TGAN80N65F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGAN80N65F2DS
   Tipo de transistor: IGBT + Diode
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 577 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 160 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 7.5 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 69 nS
   Coesⓘ - Capacitancia de salida, typ: 230 pF
   Qgⓘ - Carga total de la puerta, typ: 216 nC
   Paquete / Cubierta: TO3PN
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TGAN80N65F2DS Datasheet (PDF)

 ..1. Size:984K  trinnotech
 tgan80n65f2ds.pdf pdf_icon

TGAN80N65F2DS

TGAN80N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN80N65F2DS TO-3PN TGAN8

 6.1. Size:969K  trinnotech
 tgan80n60f2ds.pdf pdf_icon

TGAN80N65F2DS

TGAN80N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN80N60F2DS TO-3PN TGAN80N60F2DS RoHSAbsolute Maxim

Otros transistores... TGAN40N90FD , TGAN40S135FD , TGAN40S160FD , TGAN50N90FD , TGAN60N60F2DS , TGAN60N65F2DR , TGAN60N65F2DS , TGAN80N60F2DS , SGT40N60FD2PN , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , TGH60N65F2DS , HCKD5N65AM2 .

History: IRGI4086 | YGW15N120T3 | MM75G3T65B

 

 
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