TGAN80N65F2DS Datasheet and Replacement
Type Designator: TGAN80N65F2DS
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 577 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 160 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 69 nS
Coesⓘ - Output Capacitance, typ: 230 pF
Qg ⓘ - Total Gate Charge, typ: 216 nC
Package: TO3PN
TGAN80N65F2DS substitution
TGAN80N65F2DS Datasheet (PDF)
tgan80n65f2ds.pdf

TGAN80N65F2DSField Stop Trench IGBTFeatures 650V Field Stop Trench Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureECGApplicationsUPS, Inverter, Solar, WelderDevice Package Marking RemarkTGAN80N65F2DS TO-3PN TGAN8
tgan80n60f2ds.pdf

TGAN80N60F2DSField Stop Trench IGBTFeatures 600V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC QualificationECGApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTGAN80N60F2DS TO-3PN TGAN80N60F2DS RoHSAbsolute Maxim
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: 2MBI200J-120 | TGAN40N60F2D | SII100N12 | AOKS30B60D1 | SPT15N120F1 | TGAN40N120F2DW | OST50N65HF
Keywords - TGAN80N65F2DS transistor datasheet
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History: 2MBI200J-120 | TGAN40N60F2D | SII100N12 | AOKS30B60D1 | SPT15N120F1 | TGAN40N120F2DW | OST50N65HF



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