TGH60N65F2DS Todos los transistores

 

TGH60N65F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGH60N65F2DS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 428 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 155 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

TGH60N65F2DS Datasheet (PDF)

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 tgh60n65f2ds.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DSField Stop Trench IGBTFeaturesTO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureG C EApplications UPS, Inverter, Solar, WelderDevice Package Marking RemarkTGH60N65F2DS

 3.1. Size:998K  trinnotech
 tgh60n65f2dr.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DRField Stop Trench IGBTTO-247Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTG

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SKM150GB063D | APTGT100A120D1 | 2MBI150VA-120-50 | VS-GB90SA120U | XD040Q120AT1S3 | SKM50GAL12T4 | 2MBI150PC-140

 

 
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