TGH60N65F2DS Todos los transistores

 

TGH60N65F2DS IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: TGH60N65F2DS

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 428 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃

trⓘ - Tiempo de subida, typ: 45 nS

Coesⓘ - Capacitancia de salida, typ: 155 pF

Encapsulados: TO247

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TGH60N65F2DS datasheet

 ..1. Size:823K  trinnotech
 tgh60n65f2ds.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH60N65F2DS

 3.1. Size:998K  trinnotech
 tgh60n65f2dr.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DR Field Stop Trench IGBT TO-247 Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TG

Otros transistores... TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , CRG15T120BNR3S , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH .

History: SKM145GAL123D | VS-GB200TH120N | STGB19NC60W | RJP5001APP-00 | T1200EB45E | VS-ETL015Y120H | TGH40N60F2D

 

 

 

 

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