TGH60N65F2DS Todos los transistores

 

TGH60N65F2DS - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: TGH60N65F2DS
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 428 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 120 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.85 V @25℃
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 45 nS
   Coesⓘ - Capacitancia de salida, typ: 155 pF
   Paquete / Cubierta: TO247
 

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TGH60N65F2DS Datasheet (PDF)

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 tgh60n65f2ds.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DSField Stop Trench IGBTFeaturesTO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureG C EApplications UPS, Inverter, Solar, WelderDevice Package Marking RemarkTGH60N65F2DS

 3.1. Size:998K  trinnotech
 tgh60n65f2dr.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DRField Stop Trench IGBTTO-247Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTG

Otros transistores... TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , SGH80N60UFD , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH .

History: STGW12NB60H

 

 
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