TGH60N65F2DS Datasheet and Replacement
Type Designator: TGH60N65F2DS
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 120 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 45 nS
Coesⓘ - Output Capacitance, typ: 155 pF
Package: TO247
TGH60N65F2DS substitution
TGH60N65F2DS Datasheet (PDF)
tgh60n65f2ds.pdf
TGH60N65F2DSField Stop Trench IGBTFeaturesTO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating TemperatureG C EApplications UPS, Inverter, Solar, WelderDevice Package Marking RemarkTGH60N65F2DS
tgh60n65f2dr.pdf
TGH60N65F2DRField Stop Trench IGBTTO-247Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5s RoHS Compliant JEDEC QualificationG C EApplicationsUPS, Welder, Inverter, SolarDevice Package Marking RemarkTG
Datasheet: TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , SGH80N60UFD , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH .
History: IXGF30N400 | AOTF5B65M2 | IGC142T120T6RH | NGTB03N60R2DT4G | IXSN55N120A | HGTD10N50F1S9A | NTE3301
Keywords - TGH60N65F2DS transistor datasheet
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History: IXGF30N400 | AOTF5B65M2 | IGC142T120T6RH | NGTB03N60R2DT4G | IXSN55N120A | HGTD10N50F1S9A | NTE3301
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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