TGH60N65F2DS PDF and Equivalents Search

 

TGH60N65F2DS Specs and Replacement

Type Designator: TGH60N65F2DS

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 428 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 120 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.85 V @25℃

tr ⓘ - Rise Time, typ: 45 nS

Coesⓘ - Output Capacitance, typ: 155 pF

Package: TO247

 TGH60N65F2DS Substitution

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TGH60N65F2DS datasheet

 ..1. Size:823K  trinnotech
 tgh60n65f2ds.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DS Field Stop Trench IGBT Features TO-247 650V Field Stop Trench IGBT Technology Low Switching Loss for a Wide Temperature Range Positive Temperature Coefficient Easy Parallel Operation RoHS Compliant JEDEC Qualification 175 Operating Temperature G C E Applications UPS, Inverter, Solar, Welder Device Package Marking Remark TGH60N65F2DS... See More ⇒

 3.1. Size:998K  trinnotech
 tgh60n65f2dr.pdf pdf_icon

TGH60N65F2DS

TGH60N65F2DR Field Stop Trench IGBT TO-247 Features 650V Field Stop Trench IGBT Technology Low Conduction Loss Positive Temperature Coefficient Easy Parallel Operation 175 Operating Temperature Short Circuit Withstanding Time 5 s RoHS Compliant JEDEC Qualification G C E Applications UPS, Welder, Inverter, Solar Device Package Marking Remark TG... See More ⇒

Specs: TGAN80N60F2DS , TGAN80N65F2DS , TGH40N120F2DR , TGH40N135FD , TGH40N60F2D , TGH40N65F2DR , TGH40N65F2DS , TGH60N65F2DR , CRG15T120BNR3S , HCKD5N65AM2 , HCKD5N65BM2 , HCKW25N120H2 , HCKW40N120BH1 , HCKW40N120CS2 , HCKW40N120H1 , MSG06T65FLD , MSG100D350FH .

History: NGD18N45CLBT4G | STGB18N40LZT4

Keywords - TGH60N65F2DS transistor spec

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