MSG25T120FQC - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MSG25T120FQC
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 350
Tensión máxima colector-emisor |Vce|, V: 1200
Tensión máxima puerta-emisor |Vge|, V: 20
Colector de Corriente Continua a 25℃ |Ic|, A: 50
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.75
Tensión máxima de puerta-umbral |VGE(th)|, V: 6.5
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 77
Capacitancia de salida (Cc), typ, pF: 120
Carga total de la puerta (Qg), typ, nC: 120
Paquete / Cubierta: TO247
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MSG25T120FQC Datasheet (PDF)
msg25t120fqc.pdf
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MSG25T120FQCFeatures Low gate charge FS Technology Saturation voltage:VCE(sat),typ= 1.75V @IC=25A and TC=25 RoHS productApplications General purpose inverters Induction heating(IH) UPSOrder Codes Marking PackageMSG25T120FQC MSG25T120FQC TO-247Absolute RatingsTc=25Parameter Symbol MSG25T120FQC UnitCollector-Emmiter Voltage Vces 1200
msg25t120fpc.pdf
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MSG25T120FPCN-Channel IGBTFeatures Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 30GEST =25C 50CCollector curre ICT
msg25t120fl.pdf
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MSG25T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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