MSG25T120FQC IGBT. Datasheet pdf. Equivalent
Type Designator: MSG25T120FQC
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 350 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 77 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Qgⓘ - Total Gate Charge, typ: 120 nC
Package: TO247
MSG25T120FQC Transistor Equivalent Substitute - IGBT Cross-Reference Search
MSG25T120FQC Datasheet (PDF)
msg25t120fqc.pdf
MSG25T120FQCFeatures Low gate charge FS Technology Saturation voltage:VCE(sat),typ= 1.75V @IC=25A and TC=25 RoHS productApplications General purpose inverters Induction heating(IH) UPSOrder Codes Marking PackageMSG25T120FQC MSG25T120FQC TO-247Absolute RatingsTc=25Parameter Symbol MSG25T120FQC UnitCollector-Emmiter Voltage Vces 1200
msg25t120fpc.pdf
MSG25T120FPCN-Channel IGBTFeatures Low Gate charge FS Technology VCE(sat) = 1.68V @ IC = 25A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS InverterAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 1200CESVGate-emitter voltage V 30GEST =25C 50CCollector curre ICT
msg25t120fl.pdf
MSG25T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
Datasheet: MSG20T120FQC , MSG20T65FLE , MSG20T65FQE , MSG20T65HPC0 , MSG20T65HPE0 , MSG20T65HPT1 , MSG25T120FL , MSG25T120FPC , GT30J127 , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , MSG40T120FH , MSG40T120FHW , MSG40T120FL , MSG40T120FQC .
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