MSG40T120FH Todos los transistores

 

MSG40T120FH - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MSG40T120FH
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 312 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 1200 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.2 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 81 nS
   Coesⓘ - Capacitancia de salida, typ: 200 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

MSG40T120FH Datasheet (PDF)

 ..1. Size:3086K  cn maspower
msg40t120fh.pdf pdf_icon

MSG40T120FH

MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 ..2. Size:1718K  cn maspower
msg40t120fh msg40t120fhw.pdf pdf_icon

MSG40T120FH

MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin

 4.1. Size:1479K  cn maspower
msg40t120fl.pdf pdf_icon

MSG40T120FH

MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod

 4.2. Size:6609K  cn maspower
msg40t120fqc.pdf pdf_icon

MSG40T120FH

MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren

Otros transistores... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: CT35SM-8 | NCE75ED120VTP4 | IXGM40N60 | AUIRGP35B60PD | APTGT200DA170D3 | IXA20PT1200LB | FD400R65KF1-K

 

 
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