MSG40T120FH - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.
Наименование: MSG40T120FH
Тип транзистора: IGBT + Diode
Тип управляющего канала: N
Pcⓘ - Максимальная рассеиваемая мощность: 312 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic|ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tjⓘ - Максимальная температура перехода: 150 ℃
trⓘ - Время нарастания типовое: 81 nS
Coesⓘ - Выходная емкость, типовая: 200 pF
Qgⓘ - Общий заряд затвора, typ: 240 nC
Тип корпуса: TO247
Аналог (замена) для MSG40T120FH
MSG40T120FH Datasheet (PDF)
msg40t120fh.pdf
MSG40T120FHHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
msg40t120fh msg40t120fhw.pdf
MSG40T120FH/FHWHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance parallelingCE(sat)and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin
msg40t120fl.pdf
MSG40T120FLHigh speed Trench Fieldstop IGBTGeneral Description FeaturesThis IGBT is produced using advanced trench High Speed Switchingfieldstop IGBT technology, which provides low Positive Temperature coefficient for easyV , high switching performance and parallelingCE(sat)excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod
msg40t120fqc.pdf
MSG40T120FQCFeatures Low gate charge. Trench FS Technology Saturation Voltage:VCE(sat) = 1.8V @ IC = 40 A RoHS ComplaintApplications General purpose inverters UPSAbsolute Maximum RatingsParameter Symbol Value UnitCollector to Emitter Voltage V 1200CESVGate to Emitter Voltage V 20GESTurn-off safe area - 160 AT =25 80CCollector Curren
msg40t65hpc0 msg40t65hpe0.pdf
MSG40T65HPC0/E0Features High Speed Switching &Low Power Loss V =1.95V@ I =40ACE(sat) C Eoff=0.35mJ@Tc=25 High Input Impedance Trr=80ns(Typ)@diF/dt=1000A/us Maximum junction temperatureT =175CvjmaxApplications UPS PFC Welder IH Cooker PV InverterAbsolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Vol
msg40t65fhc.pdf
MSG40T65FHCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.7V,I =40A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V80 AIc T=25*Collector Current-continuousT=10040 ACollector Curren
msg40t65fl.pdf
Ordering Information Part Number Marking Temp. Range Package Packing RoHS Status MSG40T65FL 40T65FL -55~175C TO-247 Tube Halogen Free Electrical Characteristic (T = 25C unless otherwise specified) vjParameter Symbol Conditions Min Typ Max UnitStatic Characteristic Collector-emitter breakdown voltage BV I = 2mA, V = 0V 650 - - VCES C GEI = 40A, V = 15V, T = 25C 1.95 2.4
msg40t65ffc.pdf
MSG40T65FFCFeatures Low gate charge Trench FS Technology, saturation voltage: V ,CE(sat)type =1.8V,I =40A and TC =25CC RoHS productApplications General purpose inverters UPSAbsolute RatingsTc=25Parameter Symbol Value UnitCollector-Emmiter Voltage Vces 650 V80 AIc T=25*Collector Current-continuousT=10040 ACollector Curren
msg40t65fh.pdf
MSG40T65FH650V Field stop Trench IGBTFeatures Fast Switching & Low VCE[sat] High Input Impedance VCE(sat) = 1.88V @ IC = 40A High Input Impedance Short circuit withstand time 10 sApplications PFC UPS Inverter Welding MachineAbsolute Maximum RatingsParameter Symbol Value UnitCollector-emitter voltage V 650CESVGate-emitter voltage
Другие IGBT... APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
Список транзисторов
Обновления
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2