MSG40T120FH Specs and Replacement
Type Designator: MSG40T120FH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 312 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
tr ⓘ - Rise Time, typ: 81 nS
Coesⓘ - Output Capacitance, typ: 200 pF
Package: TO247
MSG40T120FH Substitution - IGBT ⓘ Cross-Reference Search
MSG40T120FH datasheet
msg40t120fh.pdf
MSG40T120FH High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒
msg40t120fh msg40t120fhw.pdf
MSG40T120FH/FHW High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance paralleling CE(sat) and excellent quality. High ruggedness&good thermal stability Including fast free-wheelin... See More ⇒
msg40t120fl.pdf
MSG40T120FL High speed Trench Fieldstop IGBT General Description Features This IGBT is produced using advanced trench High Speed Switching fieldstop IGBT technology, which provides low Positive Temperature coefficient for easy V , high switching performance and paralleling CE(sat) excellent quality. High ruggedness&good thermal stability Including fast free-wheeling diod... See More ⇒
msg40t120fqc.pdf
MSG40T120FQC Features Low gate charge. Trench FS Technology Saturation Voltage VCE(sat) = 1.8V @ IC = 40 A RoHS Complaint Applications General purpose inverters UPS Absolute Maximum Ratings Parameter Symbol Value Unit Collector to Emitter Voltage V 1200 CES V Gate to Emitter Voltage V 20 GES Turn-off safe area - 160 A T =25 80 C Collector Curren... See More ⇒
Specs: MSG20T65HPT1 , MSG25T120FL , MSG25T120FPC , MSG25T120FQC , MSG30D120FLB , MSG30T65FHS , MSG30T65FHT , MSG30T65FLT , RJH60F5DPQ-A0 , MSG40T120FHW , MSG40T120FL , MSG40T120FQC , MSG40T65FFC , MSG40T65FH , MSG40T65FHC , MSG40T65HPC0 , MSG40T65HPE0 .
History: MSG15T120HLC0 | MSG80N60FQC
Keywords - MSG40T120FH transistor spec
MSG40T120FH cross reference
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History: MSG15T120HLC0 | MSG80N60FQC
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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