AOK40B65H2AL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOK40B65H2AL
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Máxima potencia disipada (Pc), W: 260
Tensión máxima colector-emisor |Vce|, V: 650
Tensión máxima puerta-emisor |Vge|, V: 30
Colector de Corriente Continua a 25℃ |Ic|, A: 80
Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 2.05
Tensión máxima de puerta-umbral |VGE(th)|, V: 4.7(typ)
Temperatura máxima de unión (Tj), ℃: 150
Tiempo de subida (tr), typ, nS: 30
Capacitancia de salida (Cc), typ, pF: 115
Carga total de la puerta (Qg), typ, nC: 61
Paquete / Cubierta: TO247
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AOK40B65H2AL Datasheet (PDF)
aok40b65h2al.pdf
AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu
aok40b60d1.pdf
AOK40B60D1TM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance
aok40b60d.pdf
AOK40B60DTM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to
aok40n30.pdf
AOK40N30300V,40A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK40N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)
aok40n30.pdf
isc N-Channel MOSFET Transistor AOK40N30FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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