AOK40B65H2AL Todos los transistores

 

AOK40B65H2AL - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOK40B65H2AL
   Tipo de transistor: IGBT
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 260 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 30 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2.05 V @25℃
   Tjⓘ - Temperatura máxima de unión: 150 ℃
   trⓘ - Tiempo de subida, typ: 30 nS
   Coesⓘ - Capacitancia de salida, typ: 115 pF
   Paquete / Cubierta: TO247
     - Selección de transistores por parámetros

 

AOK40B65H2AL Datasheet (PDF)

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AOK40B65H2AL

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 ..2. Size:1032K  aosemi
 aok40b65h2al.pdf pdf_icon

AOK40B65H2AL

AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 5.1. Size:569K  aosemi
 aok40b65hq1.pdf pdf_icon

AOK40B65H2AL

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

 5.2. Size:564K  aosemi
 aok40b65hq2.pdf pdf_icon

AOK40B65H2AL

AOK40B65HQ2TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications D

MOSTRAR MÁS

Otros transistores... JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , CRG75T60AK3HD , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L .

History: MID300-12A4 | DL2G50SH6N | MMG200DR120B | IXGT30N60C3D1 | APTGT300U120D4 | IHW30N160R5 | RJH1CM5DPQ-E0

 

 
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