All IGBT. AOK40B65H2AL Datasheet

 

AOK40B65H2AL IGBT. Datasheet pdf. Equivalent


   Type Designator: AOK40B65H2AL
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 260 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.05 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 115 pF
   Package: TO247

 AOK40B65H2AL Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AOK40B65H2AL Datasheet (PDF)

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 aok40b65h2al.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 ..2. Size:1032K  aosemi
 aok40b65h2al.pdf

AOK40B65H2AL

AOK40B65H2ALTM650 V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100 40AC) Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25 2.05VC) High efficient turn-on di/dt controllability Very high switching speed Lo

 5.1. Size:569K  aosemi
 aok40b65hq1.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65HQ1TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications U

 5.2. Size:564K  aosemi
 aok40b65hq2.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65HQ2TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage Very high switching speedIC (TC=100 40AC) Very low Vf and QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications D

 5.3. Size:565K  aosemi
 aok40b65hq3.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65HQ3TM 650V, 40A AlphaIGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE650V 650V breakdown voltage High switching speedIC (TC=100 40AC) Low QrrVCE(sat) (TJ=25 2.05VC) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technologyApplications PFC application fo

 5.4. Size:995K  aosemi
 aok40b65h1.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65H1TM650V,40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25C) 1.9V High efficient turn-on di/dt controllability Very high switching speed Low tur

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , GT30F126 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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