AOK40B65H2AL - аналоги, основные параметры, даташиты
Наименование: AOK40B65H2AL
Тип транзистора: IGBT
Тип управляющего канала: N
Предельные значения
Pc ⓘ - Максимальная рассеиваемая мощность: 260 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 650 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 30 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
Tj ⓘ - Максимальная температура перехода: 150 ℃
Электрические характеристики
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2.05 V @25℃
tr ⓘ - Время нарастания типовое: 30 nS
Coesⓘ - Выходная емкость, типовая: 115 pF
Тип корпуса: TO247
Аналог (замена) для AOK40B65H2AL
- подбор ⓘ IGBT транзистора по параметрам
AOK40B65H2AL даташит
aok40b65h2al.pdf
AOK40B65H2AL TM 650V, 40A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 40A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu
aok40b65h2al.pdf
AOK40B65H2AL TM 650 V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 40A C) Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 2.05V C) High efficient turn-on di/dt controllability Very high switching speed Lo
aok40b65hq1.pdf
AOK40B65HQ1 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications U
aok40b65hq2.pdf
AOK40B65HQ2 TM 650V, 40A AlphaIGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE 650V 650V breakdown voltage Very high switching speed IC (TC=100 40A C) Very low Vf and Qrr VCE(sat) (TJ=25 2.05V C) Low turn-off switching loss and softness Very good EMI behavior Latest AlphaIGBT technology Applications D
Другие IGBT... JNG75T120LS , JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , IKW40T120 , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L .
🌐 : EN ES РУ
Список транзисторов
Обновления
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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