Справочник IGBT. AOK40B65H2AL

 

AOK40B65H2AL - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: AOK40B65H2AL
   Тип транзистора: IGBT + Diode
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 260
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 650
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 30
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2.05
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 4.7(typ)
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 30
   Емкость коллектора типовая (Cc), pf: 115
   Общий заряд затвора (Qg), typ, nC: 61
   Тип корпуса: TO247

 Аналог (замена) для AOK40B65H2AL

 

 

AOK40B65H2AL Datasheet (PDF)

 ..1. Size:535K  1
 aok40b65h2al.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B65H2ALTM650V, 40A Alpha IGBTWith soft and fast recovery anti-parallel diodeGeneral Description Product SummaryVCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltageIC (TC=100C) 40A Very fast and soft recovery freewheeling diodeVCE(sat) (TJ=25C) 2.05V High efficient turn-on di/dt controllability Very high switching speed Low tu

 7.1. Size:711K  aosemi
 aok40b60d1.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B60D1TM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.85Vof paralleling, minimal gate spike under high dV/dtconditions and resistance

 7.2. Size:714K  aosemi
 aok40b60d.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40B60DTM600V, 40A Alpha IGBT with DiodeGeneral Description Product Summary VCE600VThe Alpha IGBTTM line of products offers best-in-class IC (TC=100C) 40Aperformance in conduction and switching losses, withrobust short circuit capability. They are designed for ease VCE(sat) (TC=25C) 1.6Vof paralleling, minimal gate spike under high dV/dtconditions and resistance to

 9.1. Size:320K  aosemi
 aok40n30.pdf

AOK40B65H2AL AOK40B65H2AL

AOK40N30300V,40A N-Channel MOSFETGeneral Description Product Summary VDS350@150The AOK40N30 is fabricated using an advanced highvoltage MOSFET process that is designed to deliver high ID (at VGS=10V) 40Alevels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.2. Size:378K  inchange semiconductor
 aok40n30.pdf

AOK40B65H2AL AOK40B65H2AL

isc N-Channel MOSFET Transistor AOK40N30FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 300V(Min)DSSStatic Drain-Source On-Resistance: R = 0.085(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

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