MBQ40T120FDS Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MBQ40T120FDS  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 357 W

|Vce|ⓘ - Tensión máxima colector-emisor: 1200 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 80 A

Tjⓘ - Temperatura máxima de unión: 150 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 2 V @25℃

trⓘ - Tiempo de subida, typ: 55 nS

Coesⓘ - Capacitancia de salida, typ: 206 pF

Encapsulados: TO247

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MBQ40T120FDS datasheet

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 mbq40t120fds.pdf pdf_icon

MBQ40T120FDS

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rr This de

 4.1. Size:1275K  magnachip
 mbq40t120fes.pdf pdf_icon

MBQ40T120FDS

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT) high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 8.1. Size:711K  1
 mbq40t65qes.pdf pdf_icon

MBQ40T120FDS

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachip s Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175 C speed and excellent quality. Applications Inverters Welding convert

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf pdf_icon

MBQ40T120FDS

MBQ40T65FDSC 650V Field Stop IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChip s Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25 C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

MOSTRAR MÁS

Otros transistores... JNG75T120QS1, JNG75T120QZU1, JNG75T65HXU1, JNG75T65HYU2, JNG80T60LS, JNG8T60FT1, JT075N065WED, AOK40B65H2AL, FGH60T65SHD, FGA40N60UFD, CRG05T60A44S-G, CRG08T60A83L, CRG08T60A93L, CRG15T120BK3SD, CRG15T60A03L, CRG15T60A83L, CRG15T60A93L