MBQ40T120FDS Даташит. Аналоги. Параметры и характеристики.
Наименование: MBQ40T120FDS
Тип транзистора: IGBT + Diode
Маркировка: 40T120FDS
Тип управляющего канала: N
Pc ⓘ - Максимальная рассеиваемая мощность: 357 W
|Vce|ⓘ - Предельно-допустимое напряжение коллектор-эмиттер: 1200 V
|Vge|ⓘ - Максимально допустимое напряжение эмиттер-затвор: 20 V
|Ic| ⓘ - Максимальный постоянный ток коллектора: 80 A @25℃
|VCEsat|ⓘ - Напряжение насыщения коллектор-эмиттер типовое: 2 V @25℃
|VGEth|ⓘ - Максимальное пороговое напряжение затвор-эмиттер: 6.5 V
Tj ⓘ - Максимальная температура перехода: 150 ℃
tr ⓘ - Время нарастания типовое: 55 nS
Coesⓘ - Выходная емкость, типовая: 206 pF
Qg ⓘ - Общий заряд затвора, typ: 341 nC
Тип корпуса: TO247
Аналог (замена) для MBQ40T120FDS
MBQ40T120FDS Datasheet (PDF)
mbq40t120fds.pdf

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de
mbq40t120fes.pdf

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de
mbq40t65qes.pdf

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert
mbq40t65fdsc.pdf

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000
Другие IGBT... JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , FGH75T65UPD , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L .
History: IXGH10N170A | SII100N06 | SKM400GB124D | AIKQ120N60CT | IRGR4045D | CM100RL-24NF
History: IXGH10N170A | SII100N06 | SKM400GB124D | AIKQ120N60CT | IRGR4045D | CM100RL-24NF



Список транзисторов
Обновления
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