Справочник IGBT. MBQ40T120FDS

 

MBQ40T120FDS - IGBT справочник. Даташиты. Аналоги. Параметры и характеристики.


   Наименование: MBQ40T120FDS
   Тип транзистора: IGBT + Diode
   Маркировка: 40T120FDS
   Тип управляющего канала: N
   Максимальная рассеиваемая мощность (Pc), W: 357
   Предельно-допустимое напряжение коллектор-эмиттер |Vce|, V: 1200
   Максимально допустимое напряжение эмиттер-затвор |Vge|, V: 20
   Максимальный постоянный ток коллектора |Ic| @25℃, A: 80
   Напряжение насыщения коллектор-эмиттер типовое |VCE(sat)|, V: 2
   Максимальное пороговое напряжение затвор-эмиттер |VGE(th)|, V: 6.5
   Максимальная температура перехода (Tj), ℃: 150
   Время нарастания типовое (tr), nS: 55
   Емкость коллектора типовая (Cc), pf: 206
   Общий заряд затвора (Qg), typ, nC: 341
   Тип корпуса: TO247

 Аналог (замена) для MBQ40T120FDS

 

 

MBQ40T120FDS Datasheet (PDF)

 ..1. Size:1272K  1
 mbq40t120fds.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de

 4.1. Size:1275K  magnachip
 mbq40t120fes.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 8.1. Size:711K  1
 mbq40t65qes.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

Другие IGBT... JNG75T120QS1 , JNG75T120QZU1 , JNG75T65HXU1 , JNG75T65HYU2 , JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , TGAN40N60F2DS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L .

 

 
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