All IGBT. MBQ40T120FDS Datasheet

 

MBQ40T120FDS IGBT. Datasheet pdf. Equivalent


   Type Designator: MBQ40T120FDS
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 40T120FDS
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 357
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 55
   Collector Capacity (Cc), typ, pF: 206
   Total Gate Charge (Qg), typ, nC: 341
   Package: TO247

 MBQ40T120FDS Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MBQ40T120FDS Datasheet (PDF)

 ..1. Size:1272K  1
 mbq40t120fds.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T120FDS High speed FieldStop Trench IGBT General Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field VCE(sat) = 2.0V @ IC = 40A Stop Trench IGBT Technology, which provides low V , CE(SAT) High Input Impedance high switching performance and excellent quality. t = 100ns (typ.) rrThis de

 4.1. Size:1275K  magnachip
 mbq40t120fes.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T120FES High speed FieldStop Trench IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V = 2.0V @ I = 40A Stop Trench IGBT Technology, which provides low V , CE(sat) C CE(SAT)high switching performance and excellent quality. High Input Impedance trr = 100ns (typ.) This de

 8.1. Size:711K  1
 mbq40t65qes.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T65QES 650V Field Stop IGBT Features General Description High Speed Switching & Low Power Loss This IGBT is produced using advanced Magnachips Field V = 1.8V @ I = 40A CE(sat) C Stop Trench IGBT Technology, which provides high switching Maximum junction temperature 175C speed and excellent quality. Applications Inverters Welding convert

 8.2. Size:1591K  1
 mbq40t65fdsc.pdf

MBQ40T120FDS MBQ40T120FDS

MBQ40T65FDSC650V Field Stop IGBTGeneral Description Features High Speed Switching & Low Power Loss This IGBT is produced using advanced MagnaChips Field V CE(sat) = 1.95V @ I C = 40A Stop Trench IGBT Technology, which provides high switching E = 0.35mJ @ T = 25C off C series and excellent quality. High Input Impedance t = 80ns (typ.) @di /dt = 1000

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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