CRG08T60A93L - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CRG08T60A93L
Tipo de transistor: IGBT
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 32 W
|Vce|ⓘ - Tensión máxima colector-emisor: 600 V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 16 A
|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
Tjⓘ - Temperatura máxima de unión: 150 ℃
trⓘ - Tiempo de subida, typ: 23 nS
Coesⓘ - Capacitancia de salida, typ: 63 pF
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de CRG08T60A93L IGBT
CRG08T60A93L Datasheet (PDF)
crg08t60a93l.pdf

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
crg08t60a83l.pdf

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
Otros transistores... AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .



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