All IGBT. CRG08T60A93L Datasheet

 

CRG08T60A93L IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG08T60A93L
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G08T60A93L
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Qgⓘ - Total Gate Charge, typ: 44 nC
   Package: TO220F

 CRG08T60A93L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG08T60A93L Datasheet (PDF)

 ..1. Size:1539K  wuxi china
 crg08t60a93l.pdf

CRG08T60A93L CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

 5.1. Size:1568K  wuxi china
 crg08t60a83l.pdf

CRG08T60A93L CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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