CRG08T60A93L Datasheet and Replacement
Type Designator: CRG08T60A93L
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 32 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 16 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 23 nS
Coesⓘ - Output Capacitance, typ: 63 pF
Package: TO220F
- IGBT Cross-Reference
CRG08T60A93L Datasheet (PDF)
crg08t60a93l.pdf

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
crg08t60a83l.pdf

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t
Datasheet: JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , STGW60V60DF , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S .
History: CM75RX-34SA | APT75GP120JDQ3 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXGT16N170 | CT25ASJ-8
Keywords - CRG08T60A93L transistor datasheet
CRG08T60A93L cross reference
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History: CM75RX-34SA | APT75GP120JDQ3 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXGT16N170 | CT25ASJ-8



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