All IGBT. CRG08T60A93L Datasheet

 

CRG08T60A93L IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG08T60A93L
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G08T60A93L
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 32
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 16
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 23
   Collector Capacity (Cc), typ, pF: 63
   Total Gate Charge (Qg), typ, nC: 44
   Package: TO220F

 CRG08T60A93L Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG08T60A93L Datasheet (PDF)

 ..1. Size:1539K  wuxi china
 crg08t60a93l.pdf

CRG08T60A93L CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

 5.1. Size:1568K  wuxi china
 crg08t60a83l.pdf

CRG08T60A93L CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

Datasheet: JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , IXGH60N60C2 , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S .

 

 
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