All IGBT. CRG08T60A93L Datasheet

 

CRG08T60A93L Datasheet and Replacement


   Type Designator: CRG08T60A93L
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 32 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 23 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Package: TO220F
      - IGBT Cross-Reference

 

CRG08T60A93L Datasheet (PDF)

 ..1. Size:1539K  wuxi china
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CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A93L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 32 W VCE(sat) 1.8 V TO-220F Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

 5.1. Size:1568K  wuxi china
crg08t60a83l.pdf pdf_icon

CRG08T60A93L

Silicon FS Trench IGBT CRG08T60A83L General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field Stop (FS) ItC offering 8 A echnology, superior conduction and switching performances. Ptot TC=25 104 W VCE(sat) 1.8 V TO-220 Features FS Trench Technology, Positive temperature coefficient Low saturation voltage: VCE(sat), t

Datasheet: JNG80T60LS , JNG8T60FT1 , JT075N065WED , AOK40B65H2AL , MBQ40T120FDS , FGA40N60UFD , CRG05T60A44S-G , CRG08T60A83L , STGW60V60DF , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , CRG25T135BKR3S .

History: CM75RX-34SA | APT75GP120JDQ3 | RJP60V0DPM | MG300N1US1 | GT10G101 | IXGT16N170 | CT25ASJ-8

Keywords - CRG08T60A93L transistor datasheet

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