CRG25T135BKR3S IGBT Equivalente. Reemplazo. Hoja de especificaciones. Principales características

CRG25T135BKR3S datasheet

..1. Size:1157K wuxi china
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Silicon FS Trench IGBT CRG25T135BKR3S General Description VCES 1350 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1350V Trench FS Ptot (TC=25 ) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-247 Features Trench

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7.2. Size:1231K wuxi china
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Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25 VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

7.3. Size:784K wuxi china
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Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3P N Features T

Otros transistores... CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , STGW60V60DF , CRG30T60AK3HD , CRG40T60AK3H , CRG40T60AK3SD , CRG50T60AK3HD , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 .