CRG25T135BKR3S Todos los transistores

 

CRG25T135BKR3S - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CRG25T135BKR3S
   Tipo de transistor: IGBT + Diode
   Código de marcado: G25T135BKR3S
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Máxima potencia disipada (Pc), W: 208
   Tensión máxima colector-emisor |Vce|, V: 1350
   Tensión máxima puerta-emisor |Vge|, V: 20
   Colector de Corriente Continua a 25℃ |Ic|, A: 50
   Voltaje de saturación colector-emisor |VCE(sat)|, typ, V: 1.95
   Tensión máxima de puerta-umbral |VGE(th)|, V: 7.5
   Temperatura máxima de unión (Tj), ℃: 150
   Tiempo de subida (tr), typ, nS: 36
   Capacitancia de salida (Cc), typ, pF: 59
   Carga total de la puerta (Qg), typ, nC: 142
   Paquete / Cubierta: TO247

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CRG25T135BKR3S Datasheet (PDF)

 ..1. Size:1157K  wuxi china
crg25t135bkr3s.pdf

CRG25T135BKR3S
CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T135BKR3S General Description VCES 1350 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1350V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-247 Features Trench

 7.1. Size:936K  crhj
crg25t120bk3s.pdf

CRG25T135BKR3S
CRG25T135BKR3S

CRG25T120BK3S CRG25T120BK3S VCES 1200 V RoHS IC 25 A Ptot TC=25 278 W VCE(sat) 2.0 V TO-247

 7.2. Size:1231K  wuxi china
crg25t120bk3s.pdf

CRG25T135BKR3S
CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

 7.3. Size:784K  wuxi china
crg25t120bnr3s.pdf

CRG25T135BKR3S
CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

Otros transistores... CRG08T60A93L , CRG15T120BK3SD , CRG15T60A03L , CRG15T60A83L , CRG15T60A93L , CRG15T60A94S , CRG15T60A84S , CRG25T120BNR3S , RJP6065DPM , CRG30T60AK3HD , CRG40T60AK3H , CRG40T60AK3SD , CRG50T60AK3HD , CRG60T60AK3H , CRG60T60AK3SD , SRE100N065FSU , SRE100N065FSU2D6 .

 

 
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