All IGBT. CRG25T135BKR3S Datasheet

 

CRG25T135BKR3S IGBT. Datasheet pdf. Equivalent


   Type Designator: CRG25T135BKR3S
   Type: IGBT + Anti-Parallel Diode
   Marking Code: G25T135BKR3S
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 208
   Maximum Collector-Emitter Voltage |Vce|, V: 1350
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
   Maximum G-E Threshold Voltag |VGE(th)|, V: 7.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 36
   Collector Capacity (Cc), typ, pF: 59
   Total Gate Charge (Qg), typ, nC: 142
   Package: TO247

 CRG25T135BKR3S Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

CRG25T135BKR3S Datasheet (PDF)

 ..1. Size:1157K  wuxi china
 crg25t135bkr3s.pdf

CRG25T135BKR3S CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T135BKR3S General Description VCES 1350 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1350V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-247 Features Trench

 7.1. Size:936K  crhj
 crg25t120bk3s.pdf

CRG25T135BKR3S CRG25T135BKR3S

CRG25T120BK3S CRG25T120BK3S VCES 1200 V RoHS IC 25 A Ptot TC=25 278 W VCE(sat) 2.0 V TO-247

 7.2. Size:1231K  wuxi china
 crg25t120bk3s.pdf

CRG25T135BKR3S CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T120BK3S General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced Field IC 25 A Stop (FS) technology, offering superior conduction and switching 278 W Ptot TC=25VCE(sat) 2.0 V performances. RoHS Compliant. TO-247 Features FS Trench Technology, Positive temperature coefficient Low saturatio

 7.3. Size:784K  wuxi china
 crg25t120bnr3s.pdf

CRG25T135BKR3S CRG25T135BKR3S

Silicon FS Trench IGBT CRG25T120BNR3S General Description VCES 1200 V Using CRM's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. TO-3PN Features T

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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