HCKZ75N65GH2 Todos los transistores

 

HCKZ75N65GH2 - IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: HCKZ75N65GH2
   Tipo de transistor: IGBT + Diode
   Código de marcado: K75H65G2
   Polaridad de transistor: N

ESPECIFICACIONES TECNICAS


   Pcⓘ - Máxima potencia disipada: 625 W
   |Vce|ⓘ - Tensión máxima colector-emisor: 650 V
   |Vge|ⓘ - Tensión máxima puerta-emisor: 20 V
   |Ic|ⓘ - Colector de Corriente Continua a 25℃: 150 A
   |VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.8 V @25℃
   |VGEth|ⓘ - Tensión máxima de puerta-umbral: 6.4 V
   Tjⓘ - Temperatura máxima de unión: 175 ℃
   trⓘ - Tiempo de subida, typ: 122 nS
   Coesⓘ - Capacitancia de salida, typ: 244 pF
   Qgⓘ - Carga total de la puerta, typ: 146 nC
   Paquete / Cubierta: TO247-4
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HCKZ75N65GH2 Datasheet (PDF)

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 hckz75n65gh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

 5.1. Size:1281K  cn vgsemi
 hckz75n65bh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Otros transistores... SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , FGH60N60SFD , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , IKW75N60TA , IGW40N60TP , IXSM35N100A , IXSM40N60 .

History: SGTP5T60SD1F

 

 
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