HCKZ75N65GH2 IGBT. Datasheet pdf. Equivalent
Type Designator: HCKZ75N65GH2
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 625 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 122 nS
Coesⓘ - Output Capacitance, typ: 244 pF
Package: TO247-4
HCKZ75N65GH2 Transistor Equivalent Substitute - IGBT Cross-Reference Search
HCKZ75N65GH2 Datasheet (PDF)
hckz75n65gh2.pdf
HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo
hckz75n65bh2.pdf
HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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