All IGBT. HCKZ75N65GH2 Datasheet

 

HCKZ75N65GH2 Datasheet and Replacement


   Type Designator: HCKZ75N65GH2
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 122 nS
   Coesⓘ - Output Capacitance, typ: 244 pF
   Package: TO247-4
 

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HCKZ75N65GH2 Datasheet (PDF)

 ..1. Size:1333K  cn vgsemi
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HCKZ75N65GH2

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

 5.1. Size:1281K  cn vgsemi
 hckz75n65bh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Datasheet: SRE75N065FSUD6 , SRE80N065FSU , SRE80N065FSU2 , SRE80N065FSU2DB , SRE80N065FSUD6 , SRE80N065FSUD8 , OST80N65HMF , HCKW75N65GH2 , RJP63F3DPP-M0 , CRG40T120BK3S , GT30G122 , IGW40T60 , IGW40T60K , IKW75N60TA , IGW40N60TP , IXSM35N100A , IXSM40N60 .

History: SSG55N60M

Keywords - HCKZ75N65GH2 transistor datasheet

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