HCKZ75N65GH2 Datasheet. Specs and Replacement

Type Designator: HCKZ75N65GH2  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 625 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 122 nS

Coesⓘ - Output Capacitance, typ: 244 pF

Package: TO247-4

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HCKZ75N65GH2 datasheet

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HCKZ75N65GH2

HCKZ75N65GH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a SiC diode,has the characteristics of low V , high cesat junction temperature and strong robustness. It is very suitable for products with high switching frequency. Features CoolWatt@ Trench-FS technology Lo... See More ⇒

 5.1. Size:1281K  cn vgsemi
 hckz75n65bh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65BH2 @ Trench-FS Cool-Watt IGBT HCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of Trench Field stop technology.The product with a anti-parallel diode,has the characteristics of low V , high junction temperature and strong robustness. It is very suitable for products with cesat high switching frequency. Features CoolWatt@ Trench-FS technolo... See More ⇒

Specs: SRE75N065FSUD6, SRE80N065FSU, SRE80N065FSU2, SRE80N065FSU2DB, SRE80N065FSUD6, SRE80N065FSUD8, OST80N65HMF, HCKW75N65GH2, RJP30E2DPP-M0, CRG40T120BK3S, GT30G122, IGW40T60, IGW40T60K, IKW75N60TA, IGW40N60TP, IXSM35N100A, IXSM40N60

Keywords - HCKZ75N65GH2 transistor spec

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