All IGBT. HCKZ75N65GH2 Datasheet

 

HCKZ75N65GH2 Datasheet and Replacement


   Type Designator: HCKZ75N65GH2
   Type: IGBT + Anti-Parallel Diode
   Marking Code: K75H65G2
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 625 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 122 nS
   Coesⓘ - Output Capacitance, typ: 244 pF
   Qg ⓘ - Total Gate Charge, typ: 146 nC
   Package: TO247-4
 

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HCKZ75N65GH2 Datasheet (PDF)

 ..1. Size:1333K  cn vgsemi
 hckz75n65gh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65GH2@Trench-FS Cool-Watt IGBTHCKZ75N65GH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a SiC diode,has the characteristics of low V , highcesatjunction temperature and strong robustness. It is very suitable for products with high switchingfrequency. Features CoolWatt@ Trench-FS technology Lo

 5.1. Size:1281K  cn vgsemi
 hckz75n65bh2.pdf pdf_icon

HCKZ75N65GH2

HCKZ75N65BH2@Trench-FS Cool-Watt IGBTHCKZ75N65BH2 is a 650V75A IGBT discrete with high speed soft switching of TrenchField stop technology.The product with a anti-parallel diode,has the characteristics of lowV , high junction temperature and strong robustness. It is very suitable for products withcesathigh switching frequency. Features CoolWatt@ Trench-FS technolo

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - HCKZ75N65GH2 transistor datasheet

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