HIA30N65T-SA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HIA30N65T-SA  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 188 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 60 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 15 nS

Coesⓘ - Capacitancia de salida, typ: 67.5 pF

Encapsulados: TO247

  📄📄 Copiar 

 Búsqueda de reemplazo de HIA30N65T-SA IGBT

- Selecciónⓘ de transistores por parámetros

 

HIA30N65T-SA datasheet

 ..1. Size:529K  semihow
 hia30n65t-sa.pdf pdf_icon

HIA30N65T-SA

Sep 2023 HIA30N65T-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package &

 7.1. Size:663K  semihow
 hia30n60bp.pdf pdf_icon

HIA30N65T-SA

Dec 2013 VCES = 600 V IC = 30 A HIA30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-247 FEATURES Low VCE(sat) Maximum Junction Temperature 150 G C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-

 8.1. Size:412K  semihow
 hia30n140ih-da.pdf pdf_icon

HIA30N65T-SA

September 2022 HIA30N140IH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 1.41 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SY

 8.2. Size:490K  semihow
 hia30n140cih-da.pdf pdf_icon

HIA30N65T-SA

Aug. 2023 HIA30N140CIH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.65 V 1400V Breakdown voltage Eoff 1.63 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SYMBOL

MOSTRAR MÁS

Otros transistores... GT45F122, GT30G131, DGU4020GR, GT30F126, GT30F133, GT30F132, HIHS50N65H-SA, HIA75N65H-SA, IHW20N135R5, HIW30N65T-SA, HIA40N120T-SA, HIA30N140CIH-DA, HIA50N65T-JA, HIA50N65H-JA, HIA50N65T-SA, HIA50N65H-SA, HIA50N65IH-JA