All IGBT. HIA30N65T-SA Datasheet

 

HIA30N65T-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIA30N65T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 188
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 60
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 15
   Collector Capacity (Cc), typ, pF: 67.5
   Total Gate Charge (Qg), typ, nC: 59
   Package: TO247

 HIA30N65T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA30N65T-SA Datasheet (PDF)

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 hia30n65t-sa.pdf

HIA30N65T-SA HIA30N65T-SA

Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

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 hia30n60bp.pdf

HIA30N65T-SA HIA30N65T-SA

Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

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 hia30n140ih-da.pdf

HIA30N65T-SA HIA30N65T-SA

September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY

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 hia30n140cih-da.pdf

HIA30N65T-SA HIA30N65T-SA

Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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