HIA30N65T-SA IGBT. Datasheet pdf. Equivalent
Type Designator: HIA30N65T-SA
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 188
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 60
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 15
Collector Capacity (Cc), typ, pF: 67.5
Total Gate Charge (Qg), typ, nC: 59
Package: TO247
HIA30N65T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search
HIA30N65T-SA Datasheet (PDF)
hia30n65t-sa.pdf
Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
hia30n60bp.pdf
Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-
hia30n140cih-da.pdf
Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL
hia30n140ih-da.pdf
September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY
Datasheet: GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , SGH80N60UFD , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA .
LIST
Last Update
IGBT: SGT10U60SDM2D | SGTQ40T120SDB2P7 | SGTQ30NE40I1DTR | SGTQ200V75SDB1PWD | SGTQ200V75SDB1PWA | SGTQ160V65SDB1APWA | SGTQ160V65SDB1APW | SGTP75V65SDS1P7 | SGTP75V65SDB1P7 | SGTP75V65FDB1P7 | SGTP75V65FDB1P4B