All IGBT. HIA30N65T-SA Datasheet

 

HIA30N65T-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIA30N65T-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 60 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 67.5 pF
   Qgⓘ - Total Gate Charge, typ: 59 nC
   Package: TO247

 HIA30N65T-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA30N65T-SA Datasheet (PDF)

 ..1. Size:529K  semihow
 hia30n65t-sa.pdf

HIA30N65T-SA HIA30N65T-SA

Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

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 hia30n60bp.pdf

HIA30N65T-SA HIA30N65T-SA

Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

 8.1. Size:412K  semihow
 hia30n140ih-da.pdf

HIA30N65T-SA HIA30N65T-SA

September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY

 8.2. Size:490K  semihow
 hia30n140cih-da.pdf

HIA30N65T-SA HIA30N65T-SA

Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

Datasheet: GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , IKW30N60H3 , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA .

 

 
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