HIA30N65T-SA Datasheet and Replacement, IGBT Equivalent Finder, Cross Reference. AllTransistors.com

HIA30N65T-SA Datasheet (PDF)

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Sep 2023HIA30N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

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Dec 2013VCES = 600 VIC = 30 AHIA30N60BP VCE(sat) typ = 2.2 V600V PT IGBTTO-247FEATURES Low VCE(sat) Maximum Junction Temperature 150 GCE Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behaviorAbsolute Maximum RatingsSymbol Parameter Value UnitsVCES Collector-

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September 2022HIA30N140IH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.50 V 1400V Breakdown voltageEoff 1.41 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SY

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Aug. 2023HIA30N140CIH-DA1400V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 1400 V Extremely low switching lossIC 30 A Excellent stability and uniformityVCE(sat) 1.65 V 1400V Breakdown voltageEoff 1.63 mJ Maximum Junction temperature, TJ(max)=175Package & Internal CircuitApplicationTO-247 SYMBOL

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .