HIA30N65T-SA Spec and Replacement, IGBT Equivalent Finder, Cross Reference

HIA30N65T-SA Specs and Replacement

   Type Designator: HIA30N65T-SA
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 188 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 60 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   tr ⓘ - Rise Time, typ: 15 nS
   Coesⓘ - Output Capacitance, typ: 67.5 pF
   Package: TO247

HIA30N65T-SA Substitution

- IGBT ⓘ Cross-Reference Search

HIA30N65T-SA datasheet

..1. Size:529K semihow
hia30n65t-sa.pdf pdf_icon

Sep 2023 HIA30N65T-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 0.698 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175 Package &... See More ⇒

7.1. Size:663K semihow
hia30n60bp.pdf pdf_icon

Dec 2013 VCES = 600 V IC = 30 A HIA30N60BP VCE(sat) typ = 2.2 V 600V PT IGBT TO-247 FEATURES Low VCE(sat) Maximum Junction Temperature 150 G C E Short Circuit Withstand Time 5 Designed for Operation Between 1-20KHz Very tight Parameter Distribution High Ruggedness, Temperature stable behavior Absolute Maximum Ratings Symbol Parameter Value Units VCES Collector-... See More ⇒

8.1. Size:412K semihow
hia30n140ih-da.pdf pdf_icon

September 2022 HIA30N140IH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.50 V 1400V Breakdown voltage Eoff 1.41 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SY... See More ⇒

8.2. Size:490K semihow
hia30n140cih-da.pdf pdf_icon

Aug. 2023 HIA30N140CIH-DA 1400V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 1400 V Extremely low switching loss IC 30 A Excellent stability and uniformity VCE(sat) 1.65 V 1400V Breakdown voltage Eoff 1.63 mJ Maximum Junction temperature, TJ(max)=175 Package & Internal Circuit Application TO-247 SYMBOL... See More ⇒

Specs: GT45F122 , GT30G131 , DGU4020GR , GT30F126 , GT30F133 , GT30F132 , HIHS50N65H-SA , HIA75N65H-SA , YGW60N65F1A1 , HIW30N65T-SA , HIA40N120T-SA , HIA30N140CIH-DA , HIA50N65T-JA , HIA50N65H-JA , HIA50N65T-SA , HIA50N65H-SA , HIA50N65IH-JA .