HIA50N65H-SA
- IGBT. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HIA50N65H-SA
Tipo de transistor: IGBT + Diode
Polaridad de transistor: N
ESPECIFICACIONES TECNICAS
Pcⓘ - Máxima potencia disipada: 272
W
|Vce|ⓘ - Tensión máxima colector-emisor: 650
V
|Vge|ⓘ - Tensión máxima puerta-emisor: 20
V
|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100
A
|VCEsat|ⓘ -
Voltaje de saturación colector-emisor, typ: 1.45
V @25℃
|VGEth|ⓘ -
Tensión máxima de puerta-umbral: 5.7
V
Tjⓘ -
Temperatura máxima de unión: 175
℃
trⓘ - Tiempo de subida, typ: 25
nS
Coesⓘ - Capacitancia de salida, typ: 140
pF
Qgⓘ - Carga total de la puerta, typ: 105
nC
Paquete / Cubierta:
TO247
Búsqueda de reemplazo de HIA50N65H-SA
- IGBT
HIA50N65H-SA
Datasheet (PDF)
..1. Size:475K semihow
hia50n65h-sa.pdf 
Jun 2023HIA50N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 1.60 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
4.1. Size:479K semihow
hia50n65h-ja.pdf
Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar
6.1. Size:472K semihow
hia50n65ih-sa.pdf
Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
6.2. Size:475K semihow
hia50n65ih-ja.pdf
Nov 2022HIA50N65IH-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 2.00 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc
6.3. Size:481K semihow
hia50n65t-ja.pdf
Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
6.4. Size:477K semihow
hia50n65t-sa.pdf
Mar 2023HIA50N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &
Otros transistores... HIA75N65H-SA
, HIA30N65T-SA
, HIW30N65T-SA
, HIA40N120T-SA
, HIA30N140CIH-DA
, HIA50N65T-JA
, HIA50N65H-JA
, HIA50N65T-SA
, JT075N065WED
, HIA50N65IH-JA
, HIA20N140IH-DA
, GT30F122
, SG40T120DB
, SG60T120UDB3
, SGT60U65FD1PN
, SGT60U65FD1PT
, OST120N65H4SMF
.
