HIA50N65H-SA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: HIA50N65H-SA  📄📄 

Tipo de transistor: IGBT

Polaridad de transistor: N

ESPECIFICACIONES TECNICAS

Pcⓘ - Máxima potencia disipada: 272 W

|Vce|ⓘ - Tensión máxima colector-emisor: 650 V

|Vge|ⓘ - Tensión máxima puerta-emisor: 20 V

|Ic|ⓘ - Colector de Corriente Continua a 25℃: 100 A

Tjⓘ - Temperatura máxima de unión: 175 ℃

CARACTERÍSTICAS ELÉCTRICAS

|VCEsat|ⓘ - Voltaje de saturación colector-emisor, typ: 1.45 V @25℃

trⓘ - Tiempo de subida, typ: 25 nS

Coesⓘ - Capacitancia de salida, typ: 140 pF

Encapsulados: TO247

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HIA50N65H-SA datasheet

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HIA50N65H-SA

Jun 2023 HIA50N65H-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 1.60 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar

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 hia50n65h-ja.pdf pdf_icon

HIA50N65H-SA

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar

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HIA50N65H-SA

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc

 6.2. Size:475K  semihow
 hia50n65ih-ja.pdf pdf_icon

HIA50N65H-SA

Nov 2022 HIA50N65IH-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 2.00 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc

MOSTRAR MÁS

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