All IGBT. HIA50N65H-SA Datasheet

 

HIA50N65H-SA IGBT. Datasheet pdf. Equivalent


   Type Designator: HIA50N65H-SA
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 272
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.45
   Maximum G-E Threshold Voltag |VGE(th)|, V: 5.7
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 25
   Collector Capacity (Cc), typ, pF: 140
   Total Gate Charge (Qg), typ, nC: 105
   Package: TO247

 HIA50N65H-SA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

HIA50N65H-SA Datasheet (PDF)

 ..1. Size:475K  semihow
 hia50n65h-sa.pdf

HIA50N65H-SA HIA50N65H-SA

Jun 2023HIA50N65H-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 1.60 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

 4.1. Size:479K  semihow
 hia50n65h-ja.pdf

HIA50N65H-SA HIA50N65H-SA

Nov 2022HIA50N65H-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.45 V Soft Fast Reverse Recovery DiodeEtot 2.10 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Solar

 6.1. Size:472K  semihow
 hia50n65ih-sa.pdf

HIA50N65H-SA HIA50N65H-SA

Mar 2023HIA50N65IH-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 1.88 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc

 6.2. Size:475K  semihow
 hia50n65ih-ja.pdf

HIA50N65H-SA HIA50N65H-SA

Nov 2022HIA50N65IH-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.35 V Soft Fast Reverse Recovery DiodeEtot 2.00 mJ Maximum Junction temperature, TJ(max)=175ApplicationPackage & Internal Circuit Induc

 6.3. Size:481K  semihow
 hia50n65t-ja.pdf

HIA50N65H-SA HIA50N65H-SA

Nov 2022HIA50N65T-JA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 2.20 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

 6.4. Size:477K  semihow
 hia50n65t-sa.pdf

HIA50N65H-SA HIA50N65H-SA

Mar 2023HIA50N65T-SA650V N-Channel Trench Field Stop IGBTFeatures Key Parameters Very Low VCE(sat) Parameter Value UnitVCES 650 V Extremely low switching lossIC 50 A Excellent stability and uniformityVCE(sat) 1.50 V Soft Fast Reverse Recovery DiodeEtot 1.76 mJ Short Circuit Withstand Time 5.0 Maximum Junction temperature, TJ(max)=175Package &

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