HIA50N65H-SA Spec and Replacement, IGBT Equivalent Finder, Cross Reference

HIA50N65H-SA Specs and Replacement

   Type Designator: HIA50N65H-SA
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings

   Pc ⓘ - Maximum Power Dissipation: 272 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   tr ⓘ - Rise Time, typ: 25 nS
   Coesⓘ - Output Capacitance, typ: 140 pF
   Package: TO247

HIA50N65H-SA Substitution

- IGBT ⓘ Cross-Reference Search

HIA50N65H-SA datasheet

..1. Size:475K semihow
hia50n65h-sa.pdf pdf_icon

Jun 2023 HIA50N65H-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 1.60 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

4.1. Size:479K semihow
hia50n65h-ja.pdf pdf_icon

Nov 2022 HIA50N65H-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.45 V Soft Fast Reverse Recovery Diode Etot 2.10 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Solar ... See More ⇒

6.1. Size:472K semihow
hia50n65ih-sa.pdf pdf_icon

Mar 2023 HIA50N65IH-SA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 1.88 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒

6.2. Size:475K semihow
hia50n65ih-ja.pdf pdf_icon

Nov 2022 HIA50N65IH-JA 650V N-Channel Trench Field Stop IGBT Features Key Parameters Very Low VCE(sat) Parameter Value Unit VCES 650 V Extremely low switching loss IC 50 A Excellent stability and uniformity VCE(sat) 1.35 V Soft Fast Reverse Recovery Diode Etot 2.00 mJ Maximum Junction temperature, TJ(max)=175 Application Package & Internal Circuit Induc... See More ⇒